VBGN40N60 Datasheet and Replacement
Type Designator: VBGN40N60
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 35 nS
Coesⓘ - Output Capacitance, typ: 220 pF
Package: TO247
- IGBT Cross-Reference
VBGN40N60 Datasheet (PDF)
vbgn40n60.pdf

VBGN40N60www.VBsemi.comGeneral DescriptionVBsemi Field Stop Trench IGBTs offer low switching losses, high energyefficiency and short circuit ruggedness.It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorShort Circuit Withstand Times 10us
vbgn40n120.pdf

VBGN40N120www.VBsemi.comGeneral DescriptionVBsemi Field Stop Trench IGBTs offer low switching losses, high energyefficiency and short circuit ruggedness.It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters.FEATURES High speed switchingHigh system efficiencyShort Circuit Withstand Times 10usExtremely enhanced
Datasheet: CT40TMH-8 , CT60AM-18B , CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , VBGN40N120 , GT30F133 , VBGN50N60 , VBGT15N120 , VBGT15N120P , VBGT15N135 , VBGT25N135 , VBGT30N135 , DG10X06T1 , DG10X12T2 .
History: VS-GB100LP120N | DM2G75SH6A | IXGH64N60A3 | IXGT40N60C2D1 | STGW80V60DF | SGS23N60UFD | 1MB08D-120
Keywords - VBGN40N60 transistor datasheet
VBGN40N60 cross reference
VBGN40N60 equivalent finder
VBGN40N60 lookup
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VBGN40N60 replacement
History: VS-GB100LP120N | DM2G75SH6A | IXGH64N60A3 | IXGT40N60C2D1 | STGW80V60DF | SGS23N60UFD | 1MB08D-120



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