VBGN40N60 IGBT. Datasheet pdf. Equivalent
Type Designator: VBGN40N60
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 250
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 80
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.65
Maximum G-E Threshold Voltag |VGE(th)|, V: 7
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 35
Collector Capacity (Cc), typ, pF: 220
Total Gate Charge (Qg), typ, nC: 150
Package: TO247
VBGN40N60 Transistor Equivalent Substitute - IGBT Cross-Reference Search
VBGN40N60 Datasheet (PDF)
vbgn40n60.pdf
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VBGN40N60www.VBsemi.comGeneral DescriptionVBsemi Field Stop Trench IGBTs offer low switching losses, high energyefficiency and short circuit ruggedness.It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorShort Circuit Withstand Times 10us
vbgn40n120.pdf
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VBGN40N120www.VBsemi.comGeneral DescriptionVBsemi Field Stop Trench IGBTs offer low switching losses, high energyefficiency and short circuit ruggedness.It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters.FEATURES High speed switchingHigh system efficiencyShort Circuit Withstand Times 10usExtremely enhanced
Datasheet: CT40TMH-8 , CT60AM-18B , CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , VBGN40N120 , IKW30N60H3 , VBGN50N60 , VBGT15N120 , VBGT15N120P , VBGT15N135 , VBGT25N135 , VBGT30N135 , DG10X06T1 , DG10X12T2 .
![VBGN40N60](https://alltransistors.com/images/us.png)
![VBGN40N60](https://alltransistors.com/images/es.png)
![VBGN40N60](https://alltransistors.com/images/ru.png)
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IGBT: TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ | TT060U065FB | TT060U060EQ | TT050U065FBC | TT050U065FB | TT050K065FQ