All IGBT. VBGN40N60 Datasheet

 

VBGN40N60 Datasheet and Replacement


   Type Designator: VBGN40N60
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 35 nS
   Coesⓘ - Output Capacitance, typ: 220 pF
   Qg ⓘ - Total Gate Charge, typ: 150 nC
   Package: TO247
 

 VBGN40N60 substitution

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VBGN40N60 Datasheet (PDF)

 ..1. Size:1463K  cn vbsemi
 vbgn40n60.pdf pdf_icon

VBGN40N60

VBGN40N60www.VBsemi.comGeneral DescriptionVBsemi Field Stop Trench IGBTs offer low switching losses, high energyefficiency and short circuit ruggedness.It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorShort Circuit Withstand Times 10us

 7.1. Size:1470K  cn vbsemi
 vbgn40n120.pdf pdf_icon

VBGN40N60

VBGN40N120www.VBsemi.comGeneral DescriptionVBsemi Field Stop Trench IGBTs offer low switching losses, high energyefficiency and short circuit ruggedness.It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters.FEATURES High speed switchingHigh system efficiencyShort Circuit Withstand Times 10usExtremely enhanced

Datasheet: CT40TMH-8 , CT60AM-18B , CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , VBGN40N120 , IKW50N60T , VBGN50N60 , VBGT15N120 , VBGT15N120P , VBGT15N135 , VBGT25N135 , VBGT30N135 , DG10X06T1 , DG10X12T2 .

History: MMG200Q120B6TC | APT15GT60KRG | MGP20N35CL

Keywords - VBGN40N60 transistor datasheet

 VBGN40N60 cross reference
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