All IGBT. VBGN50N60 Datasheet

 

VBGN50N60 Datasheet and Replacement


   Type Designator: VBGN50N60
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 277 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 45 nS
   Coesⓘ - Output Capacitance, typ: 250 pF
   Package: TO247
      - IGBT Cross-Reference

 

VBGN50N60 Datasheet (PDF)

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VBGN50N60

VBGN50N60www.VBsemi.comGeneral DescriptionVBsemi Field Stop Trench IGBTs offer low switching losses, high energyefficiency and short circuit ruggedness.It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorShort Circuit Withstand Times 10us

Datasheet: CT60AM-18B , CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , VBGN40N120 , VBGN40N60 , GT30F131 , VBGT15N120 , VBGT15N120P , VBGT15N135 , VBGT25N135 , VBGT30N135 , DG10X06T1 , DG10X12T2 , DG120X07T2 .

History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL

Keywords - VBGN50N60 transistor datasheet

 VBGN50N60 cross reference
 VBGN50N60 equivalent finder
 VBGN50N60 lookup
 VBGN50N60 substitution
 VBGN50N60 replacement

 

 
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