All IGBT. VBGN50N60 Datasheet

 

VBGN50N60 IGBT. Datasheet pdf. Equivalent


   Type Designator: VBGN50N60
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 277
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 100
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.65
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 45
   Collector Capacity (Cc), typ, pF: 250
   Total Gate Charge (Qg), typ, nC: 200
   Package: TO247

 VBGN50N60 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

VBGN50N60 Datasheet (PDF)

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 vbgn50n60.pdf

VBGN50N60 VBGN50N60

VBGN50N60www.VBsemi.comGeneral DescriptionVBsemi Field Stop Trench IGBTs offer low switching losses, high energyefficiency and short circuit ruggedness.It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorShort Circuit Withstand Times 10us

Datasheet: CT60AM-18B , CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , VBGN40N120 , VBGN40N60 , GT45F122 , VBGT15N120 , VBGT15N120P , VBGT15N135 , VBGT25N135 , VBGT30N135 , DG10X06T1 , DG10X12T2 , DG120X07T2 .

 

 
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