IXGJ40N60C2D1 Specs and Replacement

Type Designator: IXGJ40N60C2D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 220 pF

Package: TO268

 IXGJ40N60C2D1 Substitution

- IGBTⓘ Cross-Reference Search

 

IXGJ40N60C2D1 datasheet

 ..1. Size:168K  ixys
 ixgj40n60c2d1.pdf pdf_icon

IXGJ40N60C2D1

HiPerFASTTM IGBTs VCES = 600V IXGT40N60C2D1 IC110 = 40A w/ Diode IXGJ40N60C2D1 VCE(SAT) 2.7V IXGH40N60C2D1 tfi(typ) = 32ns C2-Class High Speed IGBTs TO-268 (IXGT) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-268 (IXGJ) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V ... See More ⇒

Specs: IXGH6N170, IXGH6N170A, IXGH72N60A3, IXGH72N60B3, IXGH72N60C3, IXGH85N30C3, IXGH90N60B3, IXGI48N60C3, FGH30S130P, IXGJ50N60B, IXGJ50N60C4D1, IXGK100N170, IXGK120N120A3, IXGK120N120B3, IXGK120N60A3, IXGK120N60B3, IXGK120N60C2

Keywords - IXGJ40N60C2D1 transistor spec

 IXGJ40N60C2D1 cross reference
 IXGJ40N60C2D1 equivalent finder
 IXGJ40N60C2D1 lookup
 IXGJ40N60C2D1 substitution
 IXGJ40N60C2D1 replacement