IXGJ50N60C4D1 Specs and Replacement

Type Designator: IXGJ50N60C4D1

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 125 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 52 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V

tr ⓘ - Rise Time, typ: 66 nS

Coesⓘ - Output Capacitance, typ: 100 pF

Qg ⓘ - Total Gate Charge, typ: 113 nC

Package: TO247

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IXGJ50N60C4D1 datasheet

 ..1. Size:399K  ixys
 ixgj50n60c4d1.pdf pdf_icon

IXGJ50N60C4D1

Preliminary Technical Information VCES = 600V High-Gain IGBT IXGJ50N60C4D1 IC110 = 21A w/ Diode VCE(sat) 2.50V (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C E Isolated Tab VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G = Gate E... See More ⇒

 5.1. Size:181K  ixys
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IXGJ50N60C4D1

IXGH 50N60B HiPerFASTTM IGBT VCES = 600 V IXGK 50N60B IC25 = 75 A IXGT 50N60B VCE(sat) = 2.3 V IXGJ 50N60B tfi(typ) = 120 ns TO-247 AD (IXGH) C C (TAB) Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V TO-268 (D3) ( IXGT) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) E IC25 TC = 25 C75 A TO-268 Le... See More ⇒

 5.2. Size:181K  ixys
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IXGJ50N60C4D1

IXGH 50N60B HiPerFASTTM IGBT VCES = 600 V IXGK 50N60B IC25 = 75 A IXGT 50N60B VCE(sat) = 2.3 V IXGJ 50N60B tfi(typ) = 120 ns TO-247 AD (IXGH) C C (TAB) Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V TO-268 (D3) ( IXGT) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) E IC25 TC = 25 C75 A TO-268 Le... See More ⇒

Specs: IXGH72N60A3, IXGH72N60B3, IXGH72N60C3, IXGH85N30C3, IXGH90N60B3, IXGI48N60C3, IXGJ40N60C2D1, IXGJ50N60B, RJH60F5DPQ-A0, IXGK100N170, IXGK120N120A3, IXGK120N120B3, IXGK120N60A3, IXGK120N60B3, IXGK120N60C2, IXGK28N140B3H1, IXGK320N60A3

Keywords - IXGJ50N60C4D1 transistor spec

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