IXGJ50N60C4D1 IGBT. Datasheet pdf. Equivalent
Type Designator: IXGJ50N60C4D1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 125 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 52 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 66 nS
Coesⓘ - Output Capacitance, typ: 100 pF
Qgⓘ - Total Gate Charge, typ: 113 nC
Package: TO247
IXGJ50N60C4D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXGJ50N60C4D1 Datasheet (PDF)
ixgj50n60c4d1.pdf
Preliminary Technical InformationVCES = 600VHigh-Gain IGBT IXGJ50N60C4D1IC110 = 21Aw/ Diode VCE(sat) 2.50V (Electrically Isolated Tab)High-Speed PT Trench IGBTISO TO-247TME153432Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 V CE Isolated TabVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VG = Gate E
ixgj50n60b.pdf
IXGH 50N60BHiPerFASTTM IGBT VCES = 600 VIXGK 50N60BIC25 = 75 AIXGT 50N60BVCE(sat) = 2.3 VIXGJ 50N60Btfi(typ) = 120 nsTO-247 AD (IXGH)C C (TAB)Symbol Test Conditions Maximum Ratings EVCES TJ = 25C to 150C 600 VTO-268 (D3) ( IXGT)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)EIC25 TC = 25C75 ATO-268 Le
ixgk50n60b ixgt50n60b ixgj50n60b.pdf
IXGH 50N60BHiPerFASTTM IGBT VCES = 600 VIXGK 50N60BIC25 = 75 AIXGT 50N60BVCE(sat) = 2.3 VIXGJ 50N60Btfi(typ) = 120 nsTO-247 AD (IXGH)C C (TAB)Symbol Test Conditions Maximum Ratings EVCES TJ = 25C to 150C 600 VTO-268 (D3) ( IXGT)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)EIC25 TC = 25C75 ATO-268 Le
Datasheet: IXGH72N60A3 , IXGH72N60B3 , IXGH72N60C3 , IXGH85N30C3 , IXGH90N60B3 , IXGI48N60C3 , IXGJ40N60C2D1 , IXGJ50N60B , MBQ40T65FDSC , IXGK100N170 , IXGK120N120A3 , IXGK120N120B3 , IXGK120N60A3 , IXGK120N60B3 , IXGK120N60C2 , IXGK28N140B3H1 , IXGK320N60A3 .
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