IXGK28N140B3H1 Specs and Replacement

Type Designator: IXGK28N140B3H1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃

tr ⓘ - Rise Time, typ: 36 nS

Coesⓘ - Output Capacitance, typ: 163 pF

Package: TO264

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IXGK28N140B3H1 datasheet

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IXGK28N140B3H1

GenX3TM 1400V VCES = 1400V IXGH28N140B3H1 IC110 = 28A IGBTs w/ Diode IXGX28N140B3H1 VCE(sat) 3.60V IXGK28N140B3H1 Avalanche Rated TO-247 (IXGH) G C Tab E Symbol Test Conditions Maximum Ratings PLUS247 (IXGX) VCES TJ = 25 C to 150 C 1400 V VCGR TJ = 25 C to 150 C, RGE = 1M 1400 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25 C... See More ⇒

Specs: IXGJ50N60B, IXGJ50N60C4D1, IXGK100N170, IXGK120N120A3, IXGK120N120B3, IXGK120N60A3, IXGK120N60B3, IXGK120N60C2, TGD30N40P, IXGK320N60A3, IXGK320N60B3, IXGK35N120B, IXGK35N120BD1, IXGK35N120C, IXGK35N120CD1, IXGK400N30A3, IXGK50N120C3H1

Keywords - IXGK28N140B3H1 transistor spec

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