All IGBT. IXGK28N140B3H1 Datasheet

 

IXGK28N140B3H1 Datasheet and Replacement


   Type Designator: IXGK28N140B3H1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 163 pF
   Package: TO264
 

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IXGK28N140B3H1 Datasheet (PDF)

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IXGK28N140B3H1

GenX3TM 1400V VCES = 1400VIXGH28N140B3H1IC110 = 28AIGBTs w/ DiodeIXGX28N140B3H1 VCE(sat) 3.60V IXGK28N140B3H1Avalanche RatedTO-247 (IXGH)GCTabESymbol Test Conditions Maximum RatingsPLUS247 (IXGX)VCES TJ = 25C to 150C 1400 VVCGR TJ = 25C to 150C, RGE = 1M 1400 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25C

Datasheet: IXGJ50N60B , IXGJ50N60C4D1 , IXGK100N170 , IXGK120N120A3 , IXGK120N120B3 , IXGK120N60A3 , IXGK120N60B3 , IXGK120N60C2 , FGH30S130P , IXGK320N60A3 , IXGK320N60B3 , IXGK35N120B , IXGK35N120BD1 , IXGK35N120C , IXGK35N120CD1 , IXGK400N30A3 , IXGK50N120C3H1 .

History: 1MBI800UG-330 | MG25Q6ES51

Keywords - IXGK28N140B3H1 transistor datasheet

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