IXGK400N30A3 Specs and Replacement

Type Designator: IXGK400N30A3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1000 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 400 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.15(max) V @25℃

tr ⓘ - Rise Time, typ: 45 nS

Coesⓘ - Output Capacitance, typ: 1350 pF

Package: TO264

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IXGK400N30A3 datasheet

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IXGK400N30A3

GenX3TM 300V IGBTs VCES = 300V IXGK400N30A3 IC25 = 400A IXGX400N30A3 VCE(sat) 1.15V Ultra-Low Vsat PT IGBTs for up to 10kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 300 V C Tab E E VCGR TJ = 25 C to 150 C, RGE = 1M 300 V VGES Continuous 20 V VGEM Transient 30 V PLUS247TM (IXGX) IC25 TC = 25 C (... See More ⇒

Specs: IXGK120N60C2, IXGK28N140B3H1, IXGK320N60A3, IXGK320N60B3, IXGK35N120B, IXGK35N120BD1, IXGK35N120C, IXGK35N120CD1, IRG4PC40W, IXGK50N120C3H1, IXGK50N60A2D1, IXGK50N60B2D1, IXGK50N60C2D1, IXGK50N90B2D1, IXGK55N120A3H1, IXGK60N60B2D1, IXGK60N60C2D1

Keywords - IXGK400N30A3 transistor spec

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