1MB10D-120 Datasheet and Replacement
Type Designator: 1MB10D-120
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 135 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 16 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 600 nS
Coesⓘ - Output Capacitance, typ: 250 pF
Package: TO3P
- IGBT Cross-Reference
1MB10D-120 Datasheet (PDF)
1mb10d-120.pdf

Fuji Discrete Package IGBT n Outline Drawingnn Featuresn Square RBSOA Low Saturation Voltage Less Total Power Dissipation Minimized Internal Stray Inductancen Applicationsn High Power Switching A.C. Motor Controls D.C. Motor Controls Uninterruptible Power Supplyn Maximum Ratings and Characteristics n Equivalent Circuitn n Absolute Maxim
1mb10-120.pdf

Fuji Discrete Package IGBT n Outline Drawingnn Featuresn Square RBSOA Low Saturation Voltage Less Total Power Dissipation Minimized Internal Stray Inductancen Applicationsn High Power Switching A.C. Motor Controls D.C. Motor Controls Uninterruptible Power Supplyn Maximum Ratings and Characteristics n Equivalent Circuitn n Absolute Maxim
Datasheet: TGPF20N60FDR , TGH80N65F2D2 , 1MB03D-120 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , CRG40T60AN3H , 1MB15D-060 , 1MB20-060 , 1MB20D-060 , 1MB30-060 , 1MBC03-120 , 1MBC05-060 , 1MBC05D-060 , 1MBC10-060 .
History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL
Keywords - 1MB10D-120 transistor datasheet
1MB10D-120 cross reference
1MB10D-120 equivalent finder
1MB10D-120 lookup
1MB10D-120 substitution
1MB10D-120 replacement
History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL



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