IXGK82N120B3 IGBT. Datasheet pdf. Equivalent
Type Designator: IXGK82N120B3
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 230 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 77 nS
Coesⓘ - Output Capacitance, typ: 640 pF
Qgⓘ - Total Gate Charge, typ: 350 nC
Package: TO264
IXGK82N120B3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXGK82N120B3 Datasheet (PDF)
ixgk82n120b3.pdf
Advance Technical InformationGenX3TM 1200V VCES = 1200VIXGK82N120B3IC110 = 82AIGBTsIXGX82N120B3 VCE(sat) 3.20V High-Speed Low-Vsat PT IGBTsfor 3 - 20 kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C, RGE = 1M 1200 VC(TAB)EEVGES Continuous 20 VVGEM Transient
ixgk82n120a3.pdf
Preliminary Technical InformationGenX3TM 1200V VCES = 1200VIXGK82N120A3IC110 = 82AIGBTsIXGX82N120A3 VCE(sat) 2.05V Ultra-Low-Vsat PT IGBTs forup to 3kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGCTabVCGR TJ = 25C to 150C, RGE = 1M 1200 V EEVGES Continuous 20 VVGEM Transient 3
ixgk80n60a.pdf
IXGK80N60APreliminary dataVCES = 600 VIXGK80N60AHiPerFASTTM IGBTIC25 = 80 AVCE(sat) = 2.7 Vtfi = 275 nsSymbol Test Conditions Maximum RatingsTO-264 AAVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C, limited by leads 80 AIC90 TC = 90C80 AG = Gate C = Co
Datasheet: IXGK55N120A3H1 , IXGK60N60B2D1 , IXGK60N60C2D1 , IXGK64N60B3D1 , IXGK72N60A3H1 , IXGK72N60B3H1 , IXGK75N250 , IXGK82N120A3 , GT30J124 , IXGL200N60B3 , IXGL75N250 , IXGN100N170 , IXGN120N60A3 , IXGN120N60A3D1 , IXGN200N60A2 , IXGN200N60B3 , IXGN320N60A3 .
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