IXGN400N60A3 IGBT. Datasheet pdf. Equivalent
Type Designator: IXGN400N60A3
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 830 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 400 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.05 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 95 nS
Coesⓘ - Output Capacitance, typ: 1450 pF
Qgⓘ - Total Gate Charge, typ: 870 nC
Package: SOT227B
IXGN400N60A3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXGN400N60A3 Datasheet (PDF)
ixgn400n60a3.pdf
VCES = 600VIXGN400N60A3GenX3TM 600V IGBTIC25 = 400AVCE(sat) 1.25VUltra-Low-Vsat PT IGBT forup to 5kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 600 VE VCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C (Chip Capability) 400 A E
ixgn400n60b3.pdf
Preliminary Technical InformationVCES = 600VIXGN400N60B3GenX3TM 600V IGBTIC25 = 430AVCE(sat) 1.40VMedium-Speed Low-Vsat PTIGBT for 5-40 kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 600 VE VCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VVGEM Transient 30 V
ixgn400n30a3.pdf
VCES = 300VIXGN400N30A3GenX3TM 300V IGBTIC25 = 400AVCE(sat) 1.15VUltra-Low-Vsat PT IGBT forup to 10kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 300 VE VCGR TJ = 25C to 150C, RGE = 1M 300 VGVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C (Chip Capability) 400 A E
Datasheet: IXGL75N250 , IXGN100N170 , IXGN120N60A3 , IXGN120N60A3D1 , IXGN200N60A2 , IXGN200N60B3 , IXGN320N60A3 , IXGN400N30A3 , FGH60N60SMD , IXGN400N60B3 , IXGN50N120C3H1 , IXGN60N60C2 , IXGN60N60C2D1 , IXGN72N60A3 , IXGN72N60C3H1 , IXGN82N120B3H1 , IXGN82N120C3H1 .
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