IXGN50N120C3H1 IGBT. Datasheet pdf. Equivalent
Type Designator: IXGN50N120C3H1
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 460 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 95 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.2(max) V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 36 nS
Coesⓘ - Output Capacitance, typ: 455 pF
Package: SOT227B
IXGN50N120C3H1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXGN50N120C3H1 Datasheet (PDF)
ixgn50n120c3h1.pdf
Advance Technical InformationVCES = 1200VGenX3TM 1200VIXGN50N120C3H1IC110 = 50AIGBT w/ DiodeVCE(sat) 4.2VHigh-Speed PT IGBT for20-50 kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VE
ixgn50n60bd3 ixgn50n60bd2.pdf
IXGN 50N60BD2 VCES = 600 VHiPerFASTTM IGBTIXGN 50N60BD3 IC25 = 75 Awith HiPerFREDVCE(sat) = 2.5 Vtfi = 150 nsBuck & boost configurations...BD2 ...BD3Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOCE 1534321VCES TJ = 25C to 150C 600 V2VCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VVGEM Transient 30 V4IC25 TC = 25C75 A3IC90
ixgn50n60b.pdf
HiPerFASTTM IGBT IXGN 50N60B VCES = 600 V IC25 = 75 A VCE(sat) = 2.3 Vtfi(typ) = 120nsPreliminary data sheetESymbol Test Conditions Maximum RatingsSOT-227B miniBLOCE153432E VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VE IC25 TC = 25C75 ACIC90 TC = 90C50 AG = Gate, C = Collector
Datasheet: IXGN120N60A3 , IXGN120N60A3D1 , IXGN200N60A2 , IXGN200N60B3 , IXGN320N60A3 , IXGN400N30A3 , IXGN400N60A3 , IXGN400N60B3 , CRG40T60AN3H , IXGN60N60C2 , IXGN60N60C2D1 , IXGN72N60A3 , IXGN72N60C3H1 , IXGN82N120B3H1 , IXGN82N120C3H1 , IXGP12N120A2 , IXGP12N120A3 .
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