All IGBT. IXGP16N60B2D1 Datasheet

 

IXGP16N60B2D1 Datasheet and Replacement


   Type Designator: IXGP16N60B2D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 70 pF
   Qgⓘ - Total Gate Charge, typ: 24 nC
   Package: TO220
      - IGBT Cross-Reference

 

IXGP16N60B2D1 Datasheet (PDF)

 ..1. Size:214K  ixys
 ixgp16n60b2d1.pdf pdf_icon

IXGP16N60B2D1

HiPerFASTTM IGBTs VCES = 600VIXGA16N60B2D1B2-Class High Speed IC110 = 16AIXGP16N60B2D1w/ Diode VCE(sat) 2.3VIXGH16N60B2D1tfi(typ) = 70nsTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGC C (

 3.1. Size:221K  ixys
 ixgp16n60b2.pdf pdf_icon

IXGP16N60B2D1

HiPerFASTTM IGBTs VCES = 600VIXGA16N60B2B2-Class High Speed IC110 = 16AIXGP16N60B2VCE(sat) 2.3Vtfi(typ) = 70nsTO-263 AA (IXGA)Symbol Test Conditions Maximum Ratings GEVCES TJ = 25C to 150C 600 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VTO-220AB (IXGP)VGEM Transient 30 VIC25 TC = 25C40 AIC110 TC = 110

 5.1. Size:197K  ixys
 ixgp16n60c2.pdf pdf_icon

IXGP16N60B2D1

HiPerFASTTM IGBTs VCES = 600VIXGA16N60C2C2-Class IC110 = 16AIXGP16N60C2High Speed VCE(sat) 3.0Vtfi(typ) = 33nsTO-263 AA (IXGA)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 600 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VTO-220AB (IXGP)VGEM Transient 30 VIC25 TC = 25C40 AIC110 TC = 110

 5.2. Size:216K  ixys
 ixgp16n60c2d1.pdf pdf_icon

IXGP16N60B2D1

HiPerFASTTM IGBTs VCES = 600VIXGA16N60C2D1C2-Class High Speed IC110 = 16AIXGP16N60C2D1w/ Diode VCE(sat) 3.0VIXGH16N60C2D1tfi(typ) = 33nsTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGCC

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Datasheet: IXGN82N120C3H1 , IXGP12N120A2 , IXGP12N120A3 , IXGP12N60B , IXGP14N120B , IXGP15N120B2 , IXGP15N120C , IXGP16N60B2 , RJH30E2DPP , IXGP16N60C2 , IXGP16N60C2D1 , IXGP20N100A3 , IXGP20N120 , IXGP20N120A3 , IXGP20N120B3 , IXGP24N120C3 , IXGP24N60C .

History: HMG20N65F | IXGT15N120BD1 | STGB30H60DF | 1MBI400HH-120L-50 | IXGH32N60AU1S | IRGPS46160D | GT8N101

Keywords - IXGP16N60B2D1 transistor datasheet

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 IXGP16N60B2D1 equivalent finder
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 IXGP16N60B2D1 replacement

 

 
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