DG10X12T2 Spec and Replacement
Type Designator: DG10X12T2
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 96 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 22 nS
Package: TO247
DG10X12T2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
DG10X12T2 specs
Specs: VBGN40N60 , VBGN50N60 , VBGT15N120 , VBGT15N120P , VBGT15N135 , VBGT25N135 , VBGT30N135 , DG10X06T1 , SGT60U65FD1PT , DG120X07T2 , DG15X06T1 , DG15X12T2 , DG20X06T2 , DG30X07T2 , HGTG12N60D1D , SIG20N60F , SIG20N60P .
History: VBGT25N135
Keywords - DG10X12T2 transistor spec
DG10X12T2 cross reference
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History: VBGT25N135
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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