DG10X12T2 Datasheet. Specs and Replacement

Type Designator: DG10X12T2  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 96 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 22 nS

Package: TO247

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DG10X12T2 datasheet

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DG10X12T2

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DG10X12T2

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Specs: VBGN40N60, VBGN50N60, VBGT15N120, VBGT15N120P, VBGT15N135, VBGT25N135, VBGT30N135, DG10X06T1, SGH80N60UFD, DG120X07T2, DG15X06T1, DG15X12T2, DG20X06T2, DG30X07T2, HGTG12N60D1D, SIG20N60F, SIG20N60P

Keywords - DG10X12T2 transistor spec

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