All IGBT. DG10X12T2 Datasheet

 

DG10X12T2 Datasheet and Replacement


   Type Designator: DG10X12T2
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 96 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 22 nS
   Package: TO247
      - IGBT Cross-Reference

 

DG10X12T2 Datasheet (PDF)

 ..1. Size:474K  cn starpower
 dg10x12t2.pdf pdf_icon

DG10X12T2

DG10X12T2 IGBT Discrete DOSEMI IGBT DG10X12T2 1200V/10A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10s short circuit capability Low switching loss

 9.1. Size:342K  cn starpower
 dg10x06t1.pdf pdf_icon

DG10X12T2

DG10X06T1 IGBT Discrete DOSEMI IGBT DG10X06T1 600V/10A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Fast IGBT technology Low switching loss Maximum junction temperature 175oC

Datasheet: VBGN40N60 , VBGN50N60 , VBGT15N120 , VBGT15N120P , VBGT15N135 , VBGT25N135 , VBGT30N135 , DG10X06T1 , IKW50N60T , DG120X07T2 , DG15X06T1 , DG15X12T2 , DG20X06T2 , DG30X07T2 , HGTG12N60D1D , SIG20N60F , SIG20N60P .

History: MUBW50-17T8 | BG75B12UX3-I | SGL60N90D | IXGJ50N60C4D1 | FGH40N60SMDF-F085 | SGL50N60RUFD | MGW12N120

Keywords - DG10X12T2 transistor datasheet

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