IXGP50N60C4 Specs and Replacement
Type Designator: IXGP50N60C4
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 90 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
tr ⓘ - Rise Time, typ: 66 nS
Coesⓘ - Output Capacitance, typ: 100 pF
Package: TO220
IXGP50N60C4 Substitution
IXGP50N60C4 datasheet
ixgp50n60c4.pdf
VCES = 600V High-Gain IGBTs IXGA50N60C4 IC110 = 46A IXGP50N60C4 VCE(sat) 2.3V IXGH50N60C4 High-Speed PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C C (Tab) E IC25 TC = 25 C... See More ⇒
ixgp50n60b4.pdf
VCES = 600V High-Gain IGBTs IXGA50N60B4 IC110 = 50A IXGP50N60B4 VCE(sat) 1.8V IXGH50N60B4 Low-Vsat PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C C (Tab) E IC25 TC = 25 C 1... See More ⇒
Specs: IXGP30N60C3D4 , IXGP36N60A3 , IXGP42N30C3 , IXGP48N60A3 , IXGP48N60B3 , IXGP48N60C3 , IXGP4N100 , IXGP50N60B4 , IRG4PC50U , IXGP7N60BD1 , IXGP7N60CD1 , IXGQ20N120B , SL75T120FZ , IXGQ50N60B4D1 , IXGQ50N60C4D1 , IXGR120N60B , IXGR120N60C2 .
Keywords - IXGP50N60C4 transistor spec
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