All IGBT. IXGQ50N60B4D1 Datasheet

 

IXGQ50N60B4D1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXGQ50N60B4D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 68 nS
   Coesⓘ - Output Capacitance, typ: 105 pF
   Qgⓘ - Total Gate Charge, typ: 110 nC
   Package: TO3P

 IXGQ50N60B4D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGQ50N60B4D1 Datasheet (PDF)

 ..1. Size:198K  ixys
 ixgq50n60b4d1.pdf

IXGQ50N60B4D1 IXGQ50N60B4D1

VCES = 600VHigh-Gain IGBTs IXGH50N60B4D1IC110 = 50Aw/Diode IXGQ50N60B4D1 VCE(sat) 1.8V Low-Vsat PT Trench IGBTsTO-247 (IXGH)GC TabESymbol Test Conditions Maximum RatingsTO-3P (IXGQ)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VCEIC25 TC = 25C 100 ATabIC

 5.1. Size:196K  ixys
 ixgq50n60c4d1.pdf

IXGQ50N60B4D1 IXGQ50N60B4D1

VCES = 600VHigh-Gain IGBTs IXGQ50N60C4D1IC110 = 46Aw/ Diode IXGH50N60C4D1 VCE(sat) 2.3V High-Speed PT Trench IGBTsTO-3P (IXGQ)GCESymbol Test Conditions Maximum RatingsTabVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VTO-247 (IXGH)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 90 AIC110 TC = 110

Datasheet: IXGP48N60C3 , IXGP4N100 , IXGP50N60B4 , IXGP50N60C4 , IXGP7N60BD1 , IXGP7N60CD1 , IXGQ20N120B , SL75T120FZ , SGP30N60 , IXGQ50N60C4D1 , IXGR120N60B , IXGR120N60C2 , IXGR12N60C , IXGR16N170AH1 , IXGR24N120C3D1 , IXGR24N60C , IXGR32N170AH1 .

 

 
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