All IGBT. IXGR48N60B3 Datasheet

 

IXGR48N60B3 IGBT. Datasheet pdf. Equivalent

Type Designator: IXGR48N60B3

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.1V

Maximum Collector Current |Ic|, A: 60A

Rise Time, nS: 116

Package: ISOPLUS247

IXGR48N60B3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGR48N60B3 PDF doc:

1.1. ixgr48n60c3d1.pdf Size:205K _igbt_a

IXGR48N60B3
IXGR48N60B3

GenX3TM 600V IGBT VCES = 600V IXGR48N60C3D1 with Diode IC25 = 56A ≤ VCE(sat) ≤ 2.7V ≤ ≤ ≤ (Electrically Isolated Back Surface) tfi(typ) = 38ns High Speed PT IGBTs for 40-100kHz Switching Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C IC

1.2. ixgr48n60b3.pdf Size:96K _igbt_a

IXGR48N60B3
IXGR48N60B3

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBTs IXGR48N60B3 IC25 = 60A IXGR48N60B3D1 (Electrically Isolated Back ≤ VCE(sat) ≤ ≤ 2.1V ≤ ≤ Surface) tfi(typ) = 116ns Medium-Speed Low-Vsat PT IGBTs 5-40 kHz Switching ISOPLUS247TM IXGR_B3 IXGR_B3D1 E153432 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°

1.3. ixgr48n60b3d1.pdf Size:96K _igbt_a

IXGR48N60B3
IXGR48N60B3

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBTs IXGR48N60B3 IC25 = 60A IXGR48N60B3D1 (Electrically Isolated Back ≤ VCE(sat) ≤ ≤ 2.1V ≤ ≤ Surface) tfi(typ) = 116ns Medium-Speed Low-Vsat PT IGBTs 5-40 kHz Switching ISOPLUS247TM IXGR_B3 IXGR_B3D1 E153432 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°

Datasheet: IXGR39N60BD1 , IXGR40N60B , IXGR40N60B2 , IXGR40N60B2D1 , IXGR40N60C , IXGR40N60C2 , IXGR40N60C2D1 , IXGR40N60CD1 , RJP63F3DPP-M0 , IXGR48N60B3D1 , IXGR48N60C3D1 , IXGR50N160H1 , IXGR50N60A2U1 , IXGR50N60B , IXGR50N60B2 , IXGR50N60B2D1 , IXGR50N60BD1 .

 


IXGR48N60B3
  IXGR48N60B3
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