IXGR48N60B3 Specs and Replacement
Type Designator: IXGR48N60B3
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.77 V @25℃
tr ⓘ - Rise Time, typ: 25 nS
Coesⓘ - Output Capacitance, typ: 170 pF
Package: ISOPLUS247
IXGR48N60B3 Substitution - IGBTⓘ Cross-Reference Search
IXGR48N60B3 datasheet
ixgr48n60b3.pdf
Preliminary Technical Information VCES = 600V GenX3TM 600V IGBTs IXGR48N60B3 IC25 = 60A IXGR48N60B3D1 (Electrically Isolated Back VCE(sat) 2.1V Surface) tfi(typ) = 116ns Medium-Speed Low-Vsat PT IGBTs 5-40 kHz Switching ISOPLUS247TM IXGR_B3 IXGR_B3D1 E153432 Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 ... See More ⇒
ixgr48n60b3d1.pdf
Preliminary Technical Information VCES = 600V GenX3TM 600V IGBTs IXGR48N60B3 IC25 = 60A IXGR48N60B3D1 (Electrically Isolated Back VCE(sat) 2.1V Surface) tfi(typ) = 116ns Medium-Speed Low-Vsat PT IGBTs 5-40 kHz Switching ISOPLUS247TM IXGR_B3 IXGR_B3D1 E153432 Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 ... See More ⇒
ixgr48n60c3d1.pdf
GenX3TM 600V IGBT VCES = 600V IXGR48N60C3D1 with Diode IC25 = 56A VCE(sat) 2.7V (Electrically Isolated Back Surface) tfi(typ) = 38ns High Speed PT IGBTs for 40-100kHz Switching Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C IC... See More ⇒
ixgr40n60b.pdf
VCES = 600 V IXGR 40N60B HiPerFASTTM IGBT IC25 = 70 A IXGR 40N60BD1 ISOPLUS247TM VCE(sat) = 2.1 V (Electrically Isolated Backside) tfi(typ) = 180 ns (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 VCES TJ = 25 C to 150 C 600 V E153432 VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C 70 A C E Isolated Backsi... See More ⇒
Specs: IXGR39N60BD1, IXGR40N60B, IXGR40N60B2, IXGR40N60B2D1, IXGR40N60C, IXGR40N60C2, IXGR40N60C2D1, IXGR40N60CD1, GT30F125, IXGR48N60B3D1, IXGR48N60C3D1, IXGR50N160H1, IXGR50N60A2U1, IXGR50N60B, IXGR50N60B2, IXGR50N60B2D1, IXGR50N60BD1
Keywords - IXGR48N60B3 transistor spec
IXGR48N60B3 cross reference
IXGR48N60B3 equivalent finder
IXGR48N60B3 lookup
IXGR48N60B3 substitution
IXGR48N60B3 replacement
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
Popular searches
c1384 transistor | 2sc1175 | 2sc632 | mje15030 transistor equivalent | 13003b | 2n6121 | 2sc1312 | bf495 transistor equivalent











