IXGR50N60B2 Specs and Replacement

Type Designator: IXGR50N60B2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 68 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 25 nS

Coesⓘ - Output Capacitance, typ: 240 pF

Package: ISOPLUS247

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IXGR50N60B2 datasheet

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IXGR50N60B2

IXGR 50N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 50N60B2D1 IC25 = 68 A ISOPLUS247TM VCE(sat) = 2.2 V B2-Class High Speed IGBTs tfi(typ) = 65 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25 C to 150 C 600 V (IXGR) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G (ISOLATED TAB) VGES C... See More ⇒

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IXGR50N60B2

IXGR 50N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 50N60B2D1 IC25 = 68 A ISOPLUS247TM VCE(sat) = 2.2 V B2-Class High Speed IGBTs tfi(typ) = 65 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25 C to 150 C 600 V (IXGR) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G (ISOLATED TAB) VGES C... See More ⇒

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IXGR50N60B2

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IXGR50N60B2

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Specs: IXGR40N60C2D1, IXGR40N60CD1, IXGR48N60B3, IXGR48N60B3D1, IXGR48N60C3D1, IXGR50N160H1, IXGR50N60A2U1, IXGR50N60B, GT30J122, IXGR50N60B2D1, IXGR50N60BD1, IXGR50N60C2, IXGR50N60C2D1, IXGR50N90B2D1, IXGR55N120A3H1, IXGR60N60B2, IXGR60N60B2D1

Keywords - IXGR50N60B2 transistor spec

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