IXGT16N170 Specs and Replacement

Type Designator: IXGT16N170

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 190 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 32 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃

tr ⓘ - Rise Time, typ: 48 nS

Coesⓘ - Output Capacitance, typ: 75 pF

Package: TO268

 IXGT16N170 Substitution

- IGBTⓘ Cross-Reference Search

 

IXGT16N170 datasheet

 ..1. Size:193K  ixys
ixgt16n170 ixgh16n170.pdf pdf_icon

IXGT16N170

IXGH 16N170 VCES = 1700 V High Voltage IXGT 16N170 IC25 = 32 A IGBT VCE(sat) = 3.5 V TO-268 (D3-Pak) (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 (IXGH) IC25 TC = 25 C32 A IC90 TC = 90 C16 A ICM TC = 25 C, 1 ms 80 A C (TAB) SSOA VG... See More ⇒

 0.1. Size:165K  ixys
ixgt16n170ah1.pdf pdf_icon

IXGT16N170

IXGH 16N170A VCES = 1700 V High Voltage IXGT 16N170A IC25 = 16 A IGBT IXGH 16N170AH1 VCE(sat) = 5.0 V IXGT 16N170AH1 tfi(typ) = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings H1 VCES TJ = 25 C to 150 C 1700 V TO-268 (IXGT) VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V VGES Continuous 20 V VGEM Transient 30 V G E IC25 TC = 25 C16 A C (TAB) IC90 T... See More ⇒

 0.2. Size:165K  ixys
ixgt16n170a.pdf pdf_icon

IXGT16N170

IXGH 16N170A VCES = 1700 V High Voltage IXGT 16N170A IC25 = 16 A IGBT IXGH 16N170AH1 VCE(sat) = 5.0 V IXGT 16N170AH1 tfi(typ) = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings H1 VCES TJ = 25 C to 150 C 1700 V TO-268 (IXGT) VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V VGES Continuous 20 V VGEM Transient 30 V G E IC25 TC = 25 C16 A C (TAB) IC90 T... See More ⇒

 9.1. Size:60K  ixys
ixgt15n120bd1.pdf pdf_icon

IXGT16N170

Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G VGES Continuous 20 V C E TAB VGEM Transient 30 V IC25 TC = 25 C30 A TO-2... See More ⇒

Specs: IXGR72N60A3, IXGR72N60A3H1, IXGR72N60B3D1, IXGR72N60B3H1, IXGR72N60C3D1, IXGT10N170, IXGT10N170A, IXGT15N120B2D1, SGT50T65FD1PT, IXGT16N170A, IXGT16N170AH1, IXGT20N120, IXGT20N120B, IXGT20N140C3H1, IXGT22N170, IXGT24N170, IXGT24N170A

Keywords - IXGT16N170 transistor spec

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