All IGBT. IXGT20N120 Datasheet

 

IXGT20N120 Datasheet and Replacement


   Type Designator: IXGT20N120
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 90 pF
   Qg ⓘ - Total Gate Charge, typ: 63 nC
   Package: TO268
 

 IXGT20N120 substitution

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IXGT20N120 Datasheet (PDF)

 ..1. Size:106K  ixys
 ixgh20n120 ixgt20n120.pdf pdf_icon

IXGT20N120

VCES = 1200 VIXGH 20N120IGBTIC25 = 40 AIXGT 20N120VCE(sat) = 2.5 Vtfi(typ) = 380 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VVGEM Transient 30 VGDSIC25 TC = 25C40 AIC90 TC = 90C20 ATO-268 (IXGT)ICM TC = 25C, 1 ms 80 A

 ..2. Size:104K  ixys
 ixgt20n120.pdf pdf_icon

IXGT20N120

VCES = 1200 VIXGH 20N120IGBTIC25 = 40 AIXGT 20N120VCE(sat) = 2.5 Vtfi(typ) = 380 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VVGEM Transient 30 VGDSIC25 TC = 25C40 AIC90 TC = 90C20 ATO-268 (IXGT)ICM TC = 25C, 1 ms 80 A

 0.1. Size:565K  ixys
 ixgt20n120b.pdf pdf_icon

IXGT20N120

IXGH 20N120B VCES = 1200 VHigh Voltage IGBTIXGT 20N120B IC25 = 40 AVCE(sat) = 3.4 VPreliminary Data Sheet tfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C40 ATO-247 AD (IXGH)IC110 TC = 110C20 AICM

 0.2. Size:568K  ixys
 ixgh20n120b ixgt20n120b.pdf pdf_icon

IXGT20N120

IXGH 20N120B VCES = 1200 VHigh Voltage IGBTIXGT 20N120B IC25 = 40 AVCE(sat) = 3.4 VPreliminary Data Sheet tfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C40 ATO-247 AD (IXGH)IC110 TC = 110C20 AICM

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Datasheet: IXGR72N60B3H1 , IXGR72N60C3D1 , IXGT10N170 , IXGT10N170A , IXGT15N120B2D1 , IXGT16N170 , IXGT16N170A , IXGT16N170AH1 , RJP30H1DPD , IXGT20N120B , IXGT20N140C3H1 , IXGT22N170 , IXGT24N170 , IXGT24N170A , IXGT24N170AH1 , IXGT25N160 , IXGT25N250 .

Keywords - IXGT20N120 transistor datasheet

 IXGT20N120 cross reference
 IXGT20N120 equivalent finder
 IXGT20N120 lookup
 IXGT20N120 substitution
 IXGT20N120 replacement

 

 
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