All IGBT. IXGT20N140C3H1 Datasheet

 

IXGT20N140C3H1 Datasheet and Replacement


   Type Designator: IXGT20N140C3H1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 42 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 12 nS
   Coesⓘ - Output Capacitance, typ: 145 pF
   Qg ⓘ - Total Gate Charge, typ: 88 nC
   Package: TO268
 

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IXGT20N140C3H1 Datasheet (PDF)

 ..1. Size:99K  ixys
 ixgt20n140c3h1.pdf pdf_icon

IXGT20N140C3H1

Advance Technical InformationVCES = 1400VGenX3TM 1400V IGBTs IXGH20N140C3H1IC100 = 20Aw/ Diode IXGT20N140C3H1VCE(sat) 5.0Vtfi(typ) = 32nsHigh-Speed PT IGBTsfor 20 - 50 kHz SwitchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1400 VCC (Tab)EVCGR TJ = 25C to 150C, RGE = 1M 1400 VVGES Continuous

 6.1. Size:565K  ixys
 ixgt20n120b.pdf pdf_icon

IXGT20N140C3H1

IXGH 20N120B VCES = 1200 VHigh Voltage IGBTIXGT 20N120B IC25 = 40 AVCE(sat) = 3.4 VPreliminary Data Sheet tfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C40 ATO-247 AD (IXGH)IC110 TC = 110C20 AICM

 6.2. Size:568K  ixys
 ixgh20n120b ixgt20n120b.pdf pdf_icon

IXGT20N140C3H1

IXGH 20N120B VCES = 1200 VHigh Voltage IGBTIXGT 20N120B IC25 = 40 AVCE(sat) = 3.4 VPreliminary Data Sheet tfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C40 ATO-247 AD (IXGH)IC110 TC = 110C20 AICM

 6.3. Size:53K  ixys
 ixgh20n100 ixgt20n100.pdf pdf_icon

IXGT20N140C3H1

IXGH 20N100 VCES = 1000 VIGBTIXGT 20N100 IC25 = 40 AVCE(sat) = 3.0 Vtfi(typ) = 280 nsPreliminary dataSymbol Test Conditions Maximum RatingsTO-268(IXGT)VCES TJ = 25C to 150C 1000 VGVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VEVGES Continuous 20 V(TAB)VGEM Transient 30 VTO-247 AD (IXGH)IC25 TC = 25C40 AIC90 TC = 90C20 AICM TC = 25C, 1 ms 80 AS

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Datasheet: IXGT10N170 , IXGT10N170A , IXGT15N120B2D1 , IXGT16N170 , IXGT16N170A , IXGT16N170AH1 , IXGT20N120 , IXGT20N120B , CRG40T60AN3H , IXGT22N170 , IXGT24N170 , IXGT24N170A , IXGT24N170AH1 , IXGT25N160 , IXGT25N250 , IXGT28N120B , IXGT28N120BD1 .

History: IXGH24N60C4

Keywords - IXGT20N140C3H1 transistor datasheet

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