All IGBT. IXGT2N250 Datasheet

 

IXGT2N250 Datasheet and Replacement


   Type Designator: IXGT2N250
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 32 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 5.5 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 74 nS
   Coesⓘ - Output Capacitance, typ: 8.7 pF
   Package: TO268
      - IGBT Cross-Reference

 

IXGT2N250 Datasheet (PDF)

 ..1. Size:175K  ixys
ixgt2n250.pdf pdf_icon

IXGT2N250

Advance Technical InformationHigh Voltage IGBTsVCES = 2500VIXGH2N250IXGT2N250IC110 = 2Afor Capacitor DischargeVCE(sat) 3.1VApplicationsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsGC (TAB)VCES TC = 25C to 150C 2500 VCEVCGR TJ = 25C to 150C, RGE = 1M 2500 VVGES Continuous 20 VVGEM Transient 30 VTO-268 (IXGT)IC2

 9.1. Size:138K  ixys
ixgt25n160.pdf pdf_icon

IXGT2N250

VCES = 1600 VIXGH 25N160High Voltage IGBTIC25 = 75 AIXGT 25N160VCE(sat)= 2.5 VFor Capacitor DischargeApplicationsPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TJ = 25C to 150C 1600 VVCGR TJ = 25C to 150C; RGE = 1 M 1600 VVGES Continuous 20 VGC C (TAB)VGEM Transient 30 VEIC25 TC = 25C 75 ATO-268 (IXGT)IC110

 9.2. Size:565K  ixys
ixgt20n120b.pdf pdf_icon

IXGT2N250

IXGH 20N120B VCES = 1200 VHigh Voltage IGBTIXGT 20N120B IC25 = 40 AVCE(sat) = 3.4 VPreliminary Data Sheet tfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C40 ATO-247 AD (IXGH)IC110 TC = 110C20 AICM

 9.3. Size:568K  ixys
ixgh20n120b ixgt20n120b.pdf pdf_icon

IXGT2N250

IXGH 20N120B VCES = 1200 VHigh Voltage IGBTIXGT 20N120B IC25 = 40 AVCE(sat) = 3.4 VPreliminary Data Sheet tfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C40 ATO-247 AD (IXGH)IC110 TC = 110C20 AICM

Datasheet: IXGT24N170 , IXGT24N170A , IXGT24N170AH1 , IXGT25N160 , IXGT25N250 , IXGT28N120B , IXGT28N120BD1 , IXGT28N60BD1 , RJH30E2DPP , IXGT30N120B3D1 , IXGT30N60B , IXGT30N60B2 , IXGT30N60B2D1 , IXGT30N60C2 , IXGT30N60C2D1 , IXGT30N60C3D1 , IXGT32N100A3 .

History: IKW50N60DTP | IGB30N60T | HGTP10N120BN | F3L75R07W2E3_B11 | STGB10M65DF2 | CT20ASL-8 | MMG75SR120UZA

Keywords - IXGT2N250 transistor datasheet

 IXGT2N250 cross reference
 IXGT2N250 equivalent finder
 IXGT2N250 lookup
 IXGT2N250 substitution
 IXGT2N250 replacement

 

 
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