IXGT2N250 - аналоги, основные параметры, даташиты
Наименование: IXGT2N250
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ -
Максимальная рассеиваемая мощность: 32 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 2500 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 5.5 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.6 V @25℃
tr ⓘ - Время нарастания типовое: 74 nS
Coesⓘ - Выходная емкость,
типовая: 8.7 pF
Тип корпуса: TO268
Аналог (замена) для IXGT2N250
- подбор ⓘ IGBT транзистора по параметрам
IXGT2N250 даташит
..1. Size:175K ixys
ixgt2n250.pdf 
Advance Technical Information High Voltage IGBTs VCES = 2500V IXGH2N250 IXGT2N250 IC110 = 2A for Capacitor Discharge VCE(sat) 3.1V Applications TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G C (TAB) VCES TC = 25 C to 150 C 2500 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V VGES Continuous 20 V VGEM Transient 30 V TO-268 (IXGT) IC2
9.1. Size:138K ixys
ixgt25n160.pdf 
VCES = 1600 V IXGH 25N160 High Voltage IGBT IC25 = 75 A IXGT 25N160 VCE(sat)= 2.5 V For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 1600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1600 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C 75 A TO-268 (IXGT) IC110
9.2. Size:565K ixys
ixgt20n120b.pdf 
IXGH 20N120B VCES = 1200 V High Voltage IGBT IXGT 20N120B IC25 = 40 A VCE(sat) = 3.4 V Preliminary Data Sheet tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C40 A TO-247 AD (IXGH) IC110 TC = 110 C20 A ICM
9.3. Size:568K ixys
ixgh20n120b ixgt20n120b.pdf 
IXGH 20N120B VCES = 1200 V High Voltage IGBT IXGT 20N120B IC25 = 40 A VCE(sat) = 3.4 V Preliminary Data Sheet tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C40 A TO-247 AD (IXGH) IC110 TC = 110 C20 A ICM
9.4. Size:588K ixys
ixgt28n60b.pdf 
Low VCE(sat) IGBT IXGH 28N60B VCES = 600 V IXGT 28N60B IC25 = 40 A VCE(sat) = 2.0 V Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD IC25 TC = 25 C40 A (IXGH) IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 80 A C (TAB) SSOA VGE = 15 V,
9.5. Size:173K ixys
ixgt25n250.pdf 
Preliminary Technical Information IXGH25N250 VCES = 2500 V High Voltage IGBT IXGT25N250 IC25 = 60 A For Capacitor Discharge Applications IXGV25N250S VCE(sat) 2.9 V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 2500 V C C (TAB) E VCGR TJ = 25 C to 150 C; RGE = 1 M 2500 V VGES Continuous 20 V TO-268 (IXGT) VGEM Transi
9.6. Size:53K ixys
ixgh20n100 ixgt20n100.pdf 
IXGH 20N100 VCES = 1000 V IGBT IXGT 20N100 IC25 = 40 A VCE(sat) = 3.0 V tfi(typ) = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1000 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V E VGES Continuous 20 V (TAB) VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C40 A IC90 TC = 90 C20 A ICM TC = 25 C, 1 ms 80 A S
9.7. Size:93K ixys
ixgh28n30b ixgt28n30b.pdf 
IXGH 28N30B VCES = 300 V HiPerFASTTM IGBT IXGT 28N30B IC25 = 56 A VCE(sat)typ = 2.1 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C56 A TO-268 IC90 TC = 90 C28 A (IXGT) ICM TC = 25 C, 1 ms 112 A G SSOA VGE= 15 V, TV
9.8. Size:142K ixys
ixgh25n160 ixgt25n160.pdf 
VCES = 1600 V IXGH 25N160 High Voltage IGBT IC25 = 75 A IXGT 25N160 VCE(sat)= 2.5 V For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 1600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1600 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C 75 A TO-268 (IXGT) IC110
9.9. Size:93K ixys
ixgh28n30a ixgt28n30a.pdf 
IXGH 28N30A VCES = 300 V HiPerFASTTM IGBT IXGT 28N30A IC25 = 56 A VCE(sat)typ = 1.85 V tfi(typ) = 120 ns Preliminary data TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 300 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-268 (IXGT) IC25 TC = 25 C56 A IC90 TC = 90 C28 A G E ICM TC = 25 C, 1
9.10. Size:52K ixys
ixgt20n100.pdf 
IXGH 20N100 VCES = 1000 V IGBT IXGT 20N100 IC25 = 40 A VCE(sat) = 3.0 V tfi(typ) = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1000 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V E VGES Continuous 20 V (TAB) VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C40 A IC90 TC = 90 C20 A ICM TC = 25 C, 1 ms 80 A S
9.11. Size:52K ixys
ixgt24n60c.pdf 
IXGH 24N60C VCES = 600 V HiPerFASTTM IGBT IXGT 24N60C IC25 = 48 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 60 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C48 A TO-247 AD (IXGH) IC110 TC = 110
9.12. Size:575K ixys
ixgh28n120b ixgt28n120b.pdf 
IXGH 28N120B VCES = 1200 V High Voltage IGBT IXGT 28N120B IC25 = 50 A VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C50 A TO-247 AD (IXGH) IC110 TC = 110 C28 A ICM TC = 25 C, 1 ms 150 A
9.13. Size:56K ixys
ixgh28n60bd1 ixgt28n60bd1.pdf 
Low VCE(sat) IXGH 28N60BD1 VCES = 600 V IGBT with Diode IXGT 28N60BD1 IC25 = 40 A VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V E VGES Continuous 20 V C (TAB) VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C40 A IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 8
9.14. Size:89K ixys
ixgt28n90b.pdf 
IXGH 28N90B VCES = 900 V HiPerFASTTM IGBT IXGT 28N90B IC25 = 51 A VCE(SAT) = 2.7 V Preliminary data sheet tfi(typ) = 130 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C51 A IC110 TC = 110 C28 A TO-268 (D3) ICM TC =
9.15. Size:519K ixys
ixgh24n170a ixgt24n170a.pdf 
IXGH 24N170A VCES = 1700 V High Voltage IXGT 24N170A IC25 = 24 A IGBT VCE(sat) = 6.0 V tfi(typ) = 45 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C24 A TO-247 AD (IXGH) IC90 TC = 90 C16 A ICM
9.16. Size:188K ixys
ixgt25n250hv.pdf 
Advance Technical Information VCES = 2500V High Voltage IGBT IXGT25N250HV IC110 = 25A For Capacitor Discharge Applications VCE(sat) 2.9V TO-268 G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25 C to 150 C 2500 V G = Gate C = Collector VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V E = Emiiter Tab = Collector VGES Continuous 20 V VGEM Tra
9.17. Size:515K ixys
ixgt28n60bd1.pdf 
Low VCE(sat) IXGH 28N60BD1 VCES = 600 V IGBT with Diode IXGT 28N60BD1 IC25 = 40 A VCE(sat) = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C40 A IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 80 A
9.18. Size:56K ixys
ixgt22n170.pdf 
Advance Technical Data High Voltage IXGH 22N170 VCES = 1700 V IXGT 22N170 IC25 = 40 A IGBT VCE(sat) = 3.3 V tfi(typ) = 290 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C44 A TO-247 AD (IXGH) IC90 TC = 90 C22 A ICM TC
9.19. Size:223K ixys
ixgt24n170ah1.pdf 
Preliminary Technical Information High Voltage VCES = 1700V IXGH24N170AH1 IGBTs w/Diode IXGT24N170AH1 IC25 = 24A VCE(sat) 6.0V tfi(typ) = 40ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V G C (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V C E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C 24 A
9.20. Size:79K ixys
ixgt20n60b.pdf 
VCES = 600 V IXGH 20N60B HiPerFASTTM IGBT IC25 = 40 A IXGT 20N60B VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-268 (D3) (IXGT) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G (TAB) E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C40 A TO-247 AD (IXGH) IC90 TC = 90 C20 A ICM T
9.21. Size:113K ixys
ixgt24n170.pdf 
Advance Technical Information VCES = 1700V High Voltage IXGH24N170 IC25 = 50A IGBT IXGT24N170 VCE(sat) 3.3V tfi(typ) = 250ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G C C (TAB) VGES Continuous 20 V E VGEM Transient 30 V TO-268 (IXGT) IC25 TC = 25 C 50 A IC9
9.22. Size:106K ixys
ixgh20n120 ixgt20n120.pdf 
VCES = 1200 V IXGH 20N120 IGBT IC25 = 40 A IXGT 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G D S IC25 TC = 25 C40 A IC90 TC = 90 C20 A TO-268 (IXGT) ICM TC = 25 C, 1 ms 80 A
9.23. Size:222K ixys
ixgt24n170a.pdf 
Preliminary Technical Information High Voltage VCES = 1700V IXGH24N170A IGBTs IXGT24N170A IC25 = 24A VCE(sat) 6.0V tfi(typ) = 40ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V G C (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V C E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C 24 A TO-268 (IX
9.24. Size:93K ixys
ixgh28n30 ixgt28n30.pdf 
IXGH 28N30 VCES = 300 V HiPerFASTTM IGBT IXGT 28N30 IC25 = 56 A VCE(sat)typ = 1.6 V tfi(typ) = 180 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V G E VGES Continuous 20 V (TAB) VGEM Transient 30 V IC25 TC = 25 C56 A TO-247 AD IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 112 A SSOA VGE
9.25. Size:572K ixys
ixgt28n120b.pdf 
IXGH 28N120B VCES = 1200 V High Voltage IGBT IXGT 28N120B IC25 = 50 A VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C50 A TO-247 AD (IXGH) IC110 TC = 110 C28 A ICM TC = 25 C, 1 ms 150 A
9.26. Size:195K ixys
ixgt28n120bd1.pdf 
High Voltage IGBT VCES = 1200V IXGH28N120BD1 w/ Diode IC25 = 50A IXGT28N120BD1 VCE(sat) 3.5V tfi(typ) = 170ns TO-247AD (IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V C E (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V TO-268 (IXGT) VGEM Transient 30 V IC25 TC = 25 C ( Chip Capability ) 50 A I
9.27. Size:52K ixys
ixgt20n60bd1.pdf 
IXGH 20N60BD1 HiPerFASTTM IGBT VCES = 600 V IXGT 20N60BD1 with Diode IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 AD IC25 TC = 25 C40 A (IXGH) IC90 TC = 90 C20 A
9.29. Size:104K ixys
ixgt20n120.pdf 
VCES = 1200 V IXGH 20N120 IGBT IC25 = 40 A IXGT 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G D S IC25 TC = 25 C40 A IC90 TC = 90 C20 A TO-268 (IXGT) ICM TC = 25 C, 1 ms 80 A
9.30. Size:101K ixys
ixgt24n60cd1.pdf 
IXGH 24N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 24N60CD1 IC25 = 48 A with Diode VCE(sat) = 2.5 V Lightspeed Series Preliminary data TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C48 A TO-247 AD (IXGH) IC110 TC = 110 C24 A
Другие IGBT... IXGT24N170, IXGT24N170A, IXGT24N170AH1, IXGT25N160, IXGT25N250, IXGT28N120B, IXGT28N120BD1, IXGT28N60BD1, IKW75N60T, IXGT30N120B3D1, IXGT30N60B, IXGT30N60B2, IXGT30N60B2D1, IXGT30N60C2, IXGT30N60C2D1, IXGT30N60C3D1, IXGT32N100A3
