IXGT40N60B2 Specs and Replacement

Type Designator: IXGT40N60B2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7(max) V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 180 pF

Package: TO268

 IXGT40N60B2 Substitution

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IXGT40N60B2 datasheet

 ..1. Size:575K  ixys
 ixgt40n60b2.pdf pdf_icon

IXGT40N60B2

Advance Technical Data VCES = 600 V IXGH 40N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60B2 VCE(sat) ... See More ⇒

 ..2. Size:578K  ixys
 ixgh40n60b2 ixgt40n60b2.pdf pdf_icon

IXGT40N60B2

Advance Technical Data VCES = 600 V IXGH 40N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60B2 VCE(sat) ... See More ⇒

 0.1. Size:513K  ixys
 ixgt40n60b2d1.pdf pdf_icon

IXGT40N60B2

VCES = 600 V HiPerFASTTM IGBT IXGH 40N60B2D1 IC25 = 75 A IXGT 40N60B2D1 VCE(sat) ... See More ⇒

 0.2. Size:606K  ixys
 ixgh40n60b2d1 ixgt40n60b2d1.pdf pdf_icon

IXGT40N60B2

VCES = 600 V HiPerFASTTM IGBT IXGH 40N60B2D1 IC25 = 75 A IXGT 40N60B2D1 VCE(sat) ... See More ⇒

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Specs: IXGT32N90B2D1, IXGT35N120B, IXGT35N120C, IXGT39N60B, IXGT39N60BD1, IXGT40N120A2, IXGT40N120B2D1, IXGT40N60B, CRG40T60AK3HD, IXGT40N60B2D1, IXGT40N60C, IXGT40N60C2, IXGT40N60C2D1, IXGT45N120, IXGT4N250C, IXGT50N60B2, IXGT50N60C2

Keywords - IXGT40N60B2 transistor spec

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