IXGT40N60B2D1 IGBT. Datasheet pdf. Equivalent
Type Designator: IXGT40N60B2D1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7(max) V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 210 pF
Qgⓘ - Total Gate Charge, typ: 100 nC
Package: TO268
IXGT40N60B2D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXGT40N60B2D1 Datasheet (PDF)
ixgt40n60b2d1.pdf
VCES = 600 VHiPerFASTTM IGBT IXGH 40N60B2D1IC25 = 75 AIXGT 40N60B2D1VCE(sat)
ixgh40n60b2d1 ixgt40n60b2d1.pdf
VCES = 600 VHiPerFASTTM IGBT IXGH 40N60B2D1IC25 = 75 AIXGT 40N60B2D1VCE(sat)
ixgt40n60b2.pdf
Advance Technical DataVCES = 600 VIXGH 40N60B2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60B2VCE(sat)
ixgh40n60b2 ixgt40n60b2.pdf
Advance Technical DataVCES = 600 VIXGH 40N60B2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60B2VCE(sat)
ixgh40n60b ixgt40n60b.pdf
IXGH 40N60B VCES = 600 VHiPerFASTTM IGBTIXGT 40N60B IC25 = 75 AVCE(sat) = 2.1 Vtfi = 180 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-247 AD(IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 AIC110 TC = 110C40 ATO-268 (D3)ICM TC = 25C
Datasheet: IXGT35N120B , IXGT35N120C , IXGT39N60B , IXGT39N60BD1 , IXGT40N120A2 , IXGT40N120B2D1 , IXGT40N60B , IXGT40N60B2 , TGD30N40P , IXGT40N60C , IXGT40N60C2 , IXGT40N60C2D1 , IXGT45N120 , IXGT4N250C , IXGT50N60B2 , IXGT50N60C2 , IXGT50N90B2 .
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