IXGT50N90B2 Specs and Replacement

Type Designator: IXGT50N90B2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 400 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 28 nS

Coesⓘ - Output Capacitance, typ: 180 pF

Package: TO268

 IXGT50N90B2 Substitution

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IXGT50N90B2 datasheet

 ..1. Size:162K  ixys
ixgh50n90b2 ixgt50n90b2.pdf pdf_icon

IXGT50N90B2

Advance Technical Information VCES = 900 V IXGH 50N90B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N90B2 VCE(sat) = 2.7 V tfi typ = 200 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limit... See More ⇒

 ..2. Size:158K  ixys
ixgt50n90b2.pdf pdf_icon

IXGT50N90B2

Advance Technical Information VCES = 900 V IXGH 50N90B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N90B2 VCE(sat) = 2.7 V tfi typ = 200 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limit... See More ⇒

 7.1. Size:583K  ixys
ixgt50n60b2.pdf pdf_icon

IXGT50N90B2

VCES = 600 V IXGH 50N60B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N60B2 VCE(sat) = 2.0 V tfi typ = 65 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by leads) 75 A (IXGT) IC11... See More ⇒

 7.2. Size:585K  ixys
ixgh50n60b2 ixgt50n60b2.pdf pdf_icon

IXGT50N90B2

VCES = 600 V IXGH 50N60B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N60B2 VCE(sat) = 2.0 V tfi typ = 65 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by leads) 75 A (IXGT) IC11... See More ⇒

Specs: IXGT40N60B2D1, IXGT40N60C, IXGT40N60C2, IXGT40N60C2D1, IXGT45N120, IXGT4N250C, IXGT50N60B2, IXGT50N60C2, CRG75T60AK3HD, IXGT60N60B2, IXGT60N60C2, IXGT60N60C3D1, IXGT64N60A3, IXGT64N60B3, IXGT6N170, IXGT6N170A, IXGT72N60A3

Keywords - IXGT50N90B2 transistor spec

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