All IGBT. IXGT72N60B3 Datasheet

 

IXGT72N60B3 Datasheet and Replacement


   Type Designator: IXGT72N60B3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 540 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.51 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 33 nS
   Coesⓘ - Output Capacitance, typ: 575 pF
   Qgⓘ - Total Gate Charge, typ: 230 nC
   Package: TO268
      - IGBT Cross-Reference

 

IXGT72N60B3 Datasheet (PDF)

 ..1. Size:186K  ixys
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IXGT72N60B3

GenX3TM B3-Class VCES = 600VIXGH72N60B3IC110 = 72AIGBTsIXGT72N60B3VCE(sat) 1.80Vtfi(typ) = 90nsMedium Speed low Vsat PTIGBTs 5-40 kHz SwitchingTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC(TAB)EVGEM Transient 30 VIC25 TC = 2

 5.1. Size:198K  ixys
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IXGT72N60B3

IXGH72N60A3 VCES = 600VGenX3TM 600V IGBTIXGT72N60A3IC110 = 72AUltra Low Vsat PT IGBT forVCE(sat) 1.35Vup to 5kHz switchingtfi(typ) = 250nsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGC C (TAB)EIC25 TC = 25C (lim

Datasheet: IXGT60N60B2 , IXGT60N60C2 , IXGT60N60C3D1 , IXGT64N60A3 , IXGT64N60B3 , IXGT6N170 , IXGT6N170A , IXGT72N60A3 , IRG4PC50UD , IXGV25N250S , IXGX100N170 , IXGX120N120A3 , IXGX120N120B3 , IXGX120N60A3 , IXGX120N60B3 , IXGX120N60C2 , IXGX12N90C .

History: SGP07N120 | FGA5065ADF | FGB3056-F085 | HGTP3N60A4D | AIKW40N65DH5 | IGW50N60H3 | 1MBI400N-120

Keywords - IXGT72N60B3 transistor datasheet

 IXGT72N60B3 cross reference
 IXGT72N60B3 equivalent finder
 IXGT72N60B3 lookup
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 IXGT72N60B3 replacement

 

 
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