All IGBT. IXGT72N60B3 Datasheet

 

IXGT72N60B3 Datasheet and Replacement


   Type Designator: IXGT72N60B3
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 540 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.51 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 33 nS
   Coesⓘ - Output Capacitance, typ: 575 pF
   Package: TO268
 

 IXGT72N60B3 substitution

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IXGT72N60B3 Datasheet (PDF)

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IXGT72N60B3

GenX3TM B3-Class VCES = 600VIXGH72N60B3IC110 = 72AIGBTsIXGT72N60B3VCE(sat) 1.80Vtfi(typ) = 90nsMedium Speed low Vsat PTIGBTs 5-40 kHz SwitchingTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC(TAB)EVGEM Transient 30 VIC25 TC = 2

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IXGT72N60B3

IXGH72N60A3 VCES = 600VGenX3TM 600V IGBTIXGT72N60A3IC110 = 72AUltra Low Vsat PT IGBT forVCE(sat) 1.35Vup to 5kHz switchingtfi(typ) = 250nsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGC C (TAB)EIC25 TC = 25C (lim

Datasheet: IXGT60N60B2 , IXGT60N60C2 , IXGT60N60C3D1 , IXGT64N60A3 , IXGT64N60B3 , IXGT6N170 , IXGT6N170A , IXGT72N60A3 , STGW60V60DF , IXGV25N250S , IXGX100N170 , IXGX120N120A3 , IXGX120N120B3 , IXGX120N60A3 , IXGX120N60B3 , IXGX120N60C2 , IXGX12N90C .

History: APTGT150SK170D1 | SKM195GAL063DN | IHW15N120R2 | IRGP4066DPBF | CM100RX-24S | SIB30N65G21F | SPM1004

Keywords - IXGT72N60B3 transistor datasheet

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