All IGBT. IXGX28N140B3H1 Datasheet

 

IXGX28N140B3H1 Datasheet and Replacement


   Type Designator: IXGX28N140B3H1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 163 pF
   Package: PLUS247
 

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IXGX28N140B3H1 Datasheet (PDF)

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IXGX28N140B3H1

GenX3TM 1400V VCES = 1400VIXGH28N140B3H1IC110 = 28AIGBTs w/ DiodeIXGX28N140B3H1 VCE(sat) 3.60V IXGK28N140B3H1Avalanche RatedTO-247 (IXGH)GCTabESymbol Test Conditions Maximum RatingsPLUS247 (IXGX)VCES TJ = 25C to 150C 1400 VVCGR TJ = 25C to 150C, RGE = 1M 1400 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25C

Datasheet: IXGV25N250S , IXGX100N170 , IXGX120N120A3 , IXGX120N120B3 , IXGX120N60A3 , IXGX120N60B3 , IXGX120N60C2 , IXGX12N90C , MBQ40T65FDSC , IXGX320N60A3 , IXGX320N60B3 , IXGX32N170AH1 , IXGX32N170H1 , IXGX35N120B , IXGX35N120BD1 , IXGX35N120C , IXGX35N120CD1 .

History: OST30N65KTXF

Keywords - IXGX28N140B3H1 transistor datasheet

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