IXGX35N120C Specs and Replacement

Type Designator: IXGX35N120C

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 350 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 70 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4(max) V @25℃

tr ⓘ - Rise Time, typ: 27 nS

Coesⓘ - Output Capacitance, typ: 260 pF

Package: PLUS247

 IXGX35N120C Substitution

- IGBTⓘ Cross-Reference Search

 

IXGX35N120C datasheet

 ..1. Size:45K  ixys
 ixgx35n120c.pdf pdf_icon

IXGX35N120C

Preliminary Data Sheet IXGK 35N120C VCES = 1200 V HiPerFASTTM IGBT IXGX 35N120C IC25 = 70 A IXGK 35N120CD1 VCE(sat) = 4.0 V IXGX 35N120CD1 tfi(typ) = 115 ns (D1) Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C70 A IC9... See More ⇒

 0.1. Size:45K  ixys
 ixgx35n120cd1.pdf pdf_icon

IXGX35N120C

Preliminary Data Sheet IXGK 35N120C VCES = 1200 V HiPerFASTTM IGBT IXGX 35N120C IC25 = 70 A IXGK 35N120CD1 VCE(sat) = 4.0 V IXGX 35N120CD1 tfi(typ) = 115 ns (D1) Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C70 A IC9... See More ⇒

 4.1. Size:45K  ixys
 ixgx35n120bd1.pdf pdf_icon

IXGX35N120C

Preliminary Data Sheet IXGK 35N120B VCES = 1200 V HiPerFASTTM IGBT IXGX 35N120B IC25 = 70 A IXGK 35N120BD1 VCE(sat) = 3.3 V IXGX 35N120BD1 tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C70 A IC9... See More ⇒

 4.2. Size:45K  ixys
 ixgx35n120b.pdf pdf_icon

IXGX35N120C

Preliminary Data Sheet IXGK 35N120B VCES = 1200 V HiPerFASTTM IGBT IXGX 35N120B IC25 = 70 A IXGK 35N120BD1 VCE(sat) = 3.3 V IXGX 35N120BD1 tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C70 A IC9... See More ⇒

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Specs: IXGX12N90C, IXGX28N140B3H1, IXGX320N60A3, IXGX320N60B3, IXGX32N170AH1, IXGX32N170H1, IXGX35N120B, IXGX35N120BD1, IXRH40N120, IXGX35N120CD1, IXGX400N30A, IXGX400N30A3, IXGX40N60BD1, IXGX50N120C3H1, IXGX50N60A2D1, IXGX50N60B2D1, IXGX50N60BD1

Keywords - IXGX35N120C transistor spec

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