IXGX35N120CD1 Specs and Replacement
Type Designator: IXGX35N120CD1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 70 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4(max) V @25℃
tr ⓘ - Rise Time, typ: 27 nS
Coesⓘ - Output Capacitance, typ: 260 pF
Package: PLUS247
IXGX35N120CD1 Substitution - IGBT ⓘ Cross-Reference Search
IXGX35N120CD1 datasheet
ixgx35n120cd1.pdf
Preliminary Data Sheet IXGK 35N120C VCES = 1200 V HiPerFASTTM IGBT IXGX 35N120C IC25 = 70 A IXGK 35N120CD1 VCE(sat) = 4.0 V IXGX 35N120CD1 tfi(typ) = 115 ns (D1) Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C70 A IC9... See More ⇒
ixgx35n120c.pdf
Preliminary Data Sheet IXGK 35N120C VCES = 1200 V HiPerFASTTM IGBT IXGX 35N120C IC25 = 70 A IXGK 35N120CD1 VCE(sat) = 4.0 V IXGX 35N120CD1 tfi(typ) = 115 ns (D1) Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C70 A IC9... See More ⇒
ixgx35n120bd1.pdf
Preliminary Data Sheet IXGK 35N120B VCES = 1200 V HiPerFASTTM IGBT IXGX 35N120B IC25 = 70 A IXGK 35N120BD1 VCE(sat) = 3.3 V IXGX 35N120BD1 tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C70 A IC9... See More ⇒
ixgx35n120b.pdf
Preliminary Data Sheet IXGK 35N120B VCES = 1200 V HiPerFASTTM IGBT IXGX 35N120B IC25 = 70 A IXGK 35N120BD1 VCE(sat) = 3.3 V IXGX 35N120BD1 tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C70 A IC9... See More ⇒
Specs: IXGX28N140B3H1 , IXGX320N60A3 , IXGX320N60B3 , IXGX32N170AH1 , IXGX32N170H1 , IXGX35N120B , IXGX35N120BD1 , IXGX35N120C , BT60T60ANFK , IXGX400N30A , IXGX400N30A3 , IXGX40N60BD1 , IXGX50N120C3H1 , IXGX50N60A2D1 , IXGX50N60B2D1 , IXGX50N60BD1 , IXGX50N60C2D1 .
Keywords - IXGX35N120CD1 transistor spec
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