All IGBT. IXGX82N120A3 Datasheet

 

IXGX82N120A3 Datasheet and Replacement


   Type Designator: IXGX82N120A3
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 260 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.83 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 75 nS
   Coesⓘ - Output Capacitance, typ: 520 pF
   Qgⓘ - Total Gate Charge, typ: 340 nC
   Package: PLUS247
      - IGBT Cross-Reference

 

IXGX82N120A3 Datasheet (PDF)

 ..1. Size:179K  ixys
 ixgx82n120a3.pdf pdf_icon

IXGX82N120A3

Preliminary Technical InformationGenX3TM 1200V VCES = 1200VIXGK82N120A3IC110 = 82AIGBTsIXGX82N120A3 VCE(sat) 2.05V Ultra-Low-Vsat PT IGBTs forup to 3kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGCTabVCGR TJ = 25C to 150C, RGE = 1M 1200 V EEVGES Continuous 20 VVGEM Transient 3

 4.1. Size:217K  ixys
 ixgx82n120b3.pdf pdf_icon

IXGX82N120A3

Advance Technical InformationGenX3TM 1200V VCES = 1200VIXGK82N120B3IC110 = 82AIGBTsIXGX82N120B3 VCE(sat) 3.20V High-Speed Low-Vsat PT IGBTsfor 3 - 20 kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C, RGE = 1M 1200 VC(TAB)EEVGES Continuous 20 VVGEM Transient

Datasheet: IXGX55N120A3H1 , IXGX60N60B2D1 , IXGX60N60C2D1 , IXGX64N60B3D1 , IXGX72N60A3H1 , IXGX72N60B3H1 , IXGX72N60C3H1 , IXGX75N250 , GT30J124 , IXGX82N120B3 , IXGY2N120 , IXLF19N250A , IXRA15N120 , STGWT40HP65FB , IXRH40N120 , IXRP15N120 , IXSA10N60B2D1 .

History: IRG4PH50S-E | 1MBI1500UE-330-02

Keywords - IXGX82N120A3 transistor datasheet

 IXGX82N120A3 cross reference
 IXGX82N120A3 equivalent finder
 IXGX82N120A3 lookup
 IXGX82N120A3 substitution
 IXGX82N120A3 replacement

 

 
Back to Top

 


 
.