IXGY2N120 Datasheet. Specs and Replacement

Type Designator: IXGY2N120  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 25 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 5 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 25 nS

Coesⓘ - Output Capacitance, typ: 12 pF

Package: TO252

  📄📄 Copy 

 IXGY2N120 Substitution

- IGBTⓘ Cross-Reference Search

 

IXGY2N120 datasheet

 ..1. Size:126K  ixys
 ixgy2n120.pdf pdf_icon

IXGY2N120

Preliminary Data Sheet VCES IC90 VCE(SAT) High Voltage IGBT IXGY 2N120 1200 V 2.0 A 3 V TO-252 AA (IXGY) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G E VGES Continuous 20 V C (TAB) VGEM Transient 30 V G = Gate C = Collector IC25 TC = 25 C 5 A E = Emitter TAB = Collector IC90 TC = 90 C 2 A ICM TC ... See More ⇒

Specs: IXGX60N60C2D1, IXGX64N60B3D1, IXGX72N60A3H1, IXGX72N60B3H1, IXGX72N60C3H1, IXGX75N250, IXGX82N120A3, IXGX82N120B3, CRG60T60AN3H, IXLF19N250A, IXRA15N120, STGWT40HP65FB, IXRH40N120, IXRP15N120, IXSA10N60B2D1, IXSA15N120B, IXSA20N60B2D1

Keywords - IXGY2N120 transistor spec

 IXGY2N120 cross reference
 IXGY2N120 equivalent finder
 IXGY2N120 lookup
 IXGY2N120 substitution
 IXGY2N120 replacement