IXGY2N120 Specs and Replacement
Type Designator: IXGY2N120
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 25 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 5 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
tr ⓘ - Rise Time, typ: 25 nS
Coesⓘ - Output Capacitance, typ: 12 pF
Package: TO252
IXGY2N120 Substitution - IGBT ⓘ Cross-Reference Search
IXGY2N120 datasheet
ixgy2n120.pdf
Preliminary Data Sheet VCES IC90 VCE(SAT) High Voltage IGBT IXGY 2N120 1200 V 2.0 A 3 V TO-252 AA (IXGY) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G E VGES Continuous 20 V C (TAB) VGEM Transient 30 V G = Gate C = Collector IC25 TC = 25 C 5 A E = Emitter TAB = Collector IC90 TC = 90 C 2 A ICM TC ... See More ⇒
Specs: IXGX60N60C2D1 , IXGX64N60B3D1 , IXGX72N60A3H1 , IXGX72N60B3H1 , IXGX72N60C3H1 , IXGX75N250 , IXGX82N120A3 , IXGX82N120B3 , GT30J124 , IXLF19N250A , IXRA15N120 , STGWT40HP65FB , IXRH40N120 , IXRP15N120 , IXSA10N60B2D1 , IXSA15N120B , IXSA20N60B2D1 .
History: SSG55N60M | FGPF70N33BT
Keywords - IXGY2N120 transistor spec
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History: SSG55N60M | FGPF70N33BT
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Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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