IXGY2N120 Datasheet and Replacement
Type Designator: IXGY2N120
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 25 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 5 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 25 nS
Coesⓘ - Output Capacitance, typ: 12 pF
Qg ⓘ - Total Gate Charge, typ: 9 nC
Package: TO252
IXGY2N120 substitution
IXGY2N120 Datasheet (PDF)
ixgy2n120.pdf
Preliminary Data SheetVCES IC90 VCE(SAT)High Voltage IGBTIXGY 2N1201200 V 2.0 A 3 VTO-252 AA (IXGY)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGEVGES Continuous 20 VC (TAB)VGEM Transient 30 VG = Gate C = CollectorIC25 TC = 25C 5 AE = Emitter TAB = CollectorIC90 TC = 90C 2 AICM TC
Datasheet: IXGX60N60C2D1 , IXGX64N60B3D1 , IXGX72N60A3H1 , IXGX72N60B3H1 , IXGX72N60C3H1 , IXGX75N250 , IXGX82N120A3 , IXGX82N120B3 , FGH40N60SFD , IXLF19N250A , IXRA15N120 , STGWT40HP65FB , IXRH40N120 , IXRP15N120 , IXSA10N60B2D1 , IXSA15N120B , IXSA20N60B2D1 .
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