IXLF19N250A Datasheet. Specs and Replacement

Type Designator: IXLF19N250A  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 32 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 103 pF

Package: ISOPLUS-I4-PAC

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IXLF19N250A datasheet

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IXLF19N250A

IXLF 19N250A IC25 = 32 A High Voltage IGBT VCES = 2500 V in High Voltage ISOPLUS i4-PACTM VCE(sat)= 3.2 V tf = 250 ns 5 1 1 2 5 2 IGBT Features High Voltage IGBT Symbol Conditions Maximum Ratings - substitute for high voltage MOSFETs with significantly lower voltage drop VCES TVJ = 25 C to 150 C 2500 V and comparable switching speed VGES 20 V - substitute for hi... See More ⇒

Specs: IXGX64N60B3D1, IXGX72N60A3H1, IXGX72N60B3H1, IXGX72N60C3H1, IXGX75N250, IXGX82N120A3, IXGX82N120B3, IXGY2N120, FGH60N60SMD, IXRA15N120, STGWT40HP65FB, IXRH40N120, IXRP15N120, IXSA10N60B2D1, IXSA15N120B, IXSA20N60B2D1, IXSH10N60B2D1

Keywords - IXLF19N250A transistor spec

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