All IGBT. IXLF19N250A Datasheet

 

IXLF19N250A Datasheet and Replacement


   Type Designator: IXLF19N250A
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 32 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 103 pF
   Qg ⓘ - Total Gate Charge, typ: 142 nC
   Package: ISOPLUS-I4-PAC
 

 IXLF19N250A substitution

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IXLF19N250A Datasheet (PDF)

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IXLF19N250A

IXLF 19N250AIC25 = 32 AHigh Voltage IGBTVCES = 2500 Vin High VoltageISOPLUS i4-PACTMVCE(sat)= 3.2 Vtf = 250 ns511252 IGBT Features High Voltage IGBTSymbol Conditions Maximum Ratings- substitute for high voltage MOSFETswith significantly lower voltage dropVCES TVJ = 25C to 150C 2500 Vand comparable switching speedVGES 20 V- substitute for hi

Datasheet: IXGX64N60B3D1 , IXGX72N60A3H1 , IXGX72N60B3H1 , IXGX72N60C3H1 , IXGX75N250 , IXGX82N120A3 , IXGX82N120B3 , IXGY2N120 , MBQ60T65PES , IXRA15N120 , STGWT40HP65FB , IXRH40N120 , IXRP15N120 , IXSA10N60B2D1 , IXSA15N120B , IXSA20N60B2D1 , IXSH10N60B2D1 .

History: HMG60N60T

Keywords - IXLF19N250A transistor datasheet

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