IXRA15N120 IGBT. Datasheet pdf. Equivalent
Type Designator: IXRA15N120
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 25 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 18 nS
Package: TO263
IXRA15N120 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXRA15N120 Datasheet (PDF)
ixra15n120.pdf
Advanced Technical Information IXRA 15N120VCES = 1200 VIGBT with ReverseIC25 = 25 ABlocking capabilityVCE(sat) typ. = 2.5 V2TO-263AB1TAB31 = Gate; 2, TAB = Collector; 3 = EmitterFeaturesIGBT IGBT with NPT (non punch through) Symbol Conditions Maximum Ratings structure VCES TVJ = 25C to 150C 1200 V reverse blocking capability VGES Conti
Datasheet: IXGX72N60A3H1 , IXGX72N60B3H1 , IXGX72N60C3H1 , IXGX75N250 , IXGX82N120A3 , IXGX82N120B3 , IXGY2N120 , IXLF19N250A , FGPF4536 , STGWT40HP65FB , IXRH40N120 , IXRP15N120 , IXSA10N60B2D1 , IXSA15N120B , IXSA20N60B2D1 , IXSH10N60B2D1 , IXSH15N120BD1 .
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