All IGBT. IXRP15N120 Datasheet

 

IXRP15N120 Datasheet and Replacement


   Type Designator: IXRP15N120
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 25 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 18 nS
   Qg ⓘ - Total Gate Charge, typ: 36 nC
   Package: TO220
 

 IXRP15N120 substitution

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IXRP15N120 Datasheet (PDF)

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IXRP15N120

Advanced Technical Information IXRP 15N120VCES = 1200 VIGBT with ReverseIC25 = 25 ABlocking capabilityVCE(sat) typ. = 2.5 V2TO-220AB1TAB1 = Gate; 2, TAB = Collector; 3 = Emitter3FeaturesIGBT IGBT with NPT (non punch through) Symbol Conditions Maximum Ratings structure VCES TVJ = 25C to 150C 1200 V reverse blocking capability VGES Conti

Datasheet: IXGX75N250 , IXGX82N120A3 , IXGX82N120B3 , IXGY2N120 , IXLF19N250A , IXRA15N120 , STGWT40HP65FB , IXRH40N120 , GT30J127 , IXSA10N60B2D1 , IXSA15N120B , IXSA20N60B2D1 , IXSH10N60B2D1 , IXSH15N120BD1 , IXSH20N60B2D1 , IXSH24N60B , IXSH24N60BD1 .

History: MG300Q2YS50 | IRG4PH50UDPBF | T2250AB25E | IXGH40N60B2 | NGTB20N120IHRWG

Keywords - IXRP15N120 transistor datasheet

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