IXRP15N120 PDF and Equivalents Search

 

IXRP15N120 Specs and Replacement

Type Designator: IXRP15N120

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 25 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 18 nS

Package: TO220

 IXRP15N120 Substitution

- IGBT ⓘ Cross-Reference Search

 

IXRP15N120 datasheet

 ..1. Size:82K  ixys
 ixrp15n120.pdf pdf_icon

IXRP15N120

Advanced Technical Information IXRP 15N120 VCES = 1200 V IGBT with Reverse IC25 = 25 A Blocking capability VCE(sat) typ. = 2.5 V 2 TO-220AB 1 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter 3 Features IGBT IGBT with NPT (non punch through) Symbol Conditions Maximum Ratings structure VCES TVJ = 25 C to 150 C 1200 V reverse blocking capability VGES Conti... See More ⇒

Specs: IXGX75N250, IXGX82N120A3, IXGX82N120B3, IXGY2N120, IXLF19N250A, IXRA15N120, STGWT40HP65FB, IXRH40N120, IXGH60N60, IXSA10N60B2D1, IXSA15N120B, IXSA20N60B2D1, IXSH10N60B2D1, IXSH15N120BD1, IXSH20N60B2D1, IXSH24N60B, IXSH24N60BD1

Keywords - IXRP15N120 transistor spec

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