All IGBT. IXSH24N60BD1 Datasheet

 

IXSH24N60BD1 Datasheet and Replacement


   Type Designator: IXSH24N60BD1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 48 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 160 pF
   Qgⓘ - Total Gate Charge, typ: 41 nC
   Package: TO247
      - IGBT Cross-Reference

 

IXSH24N60BD1 Datasheet (PDF)

 ..1. Size:100K  ixys
 ixsh24n60bd1.pdf pdf_icon

IXSH24N60BD1

IXSH 24N60B VCES = 600 VHigh Speed IGBTIXST 24N60B IC25 = 48 AIXSH 24N60BD1 VCE(sat) = 2.5 VShort Circuit SOA CapabilityIXST 24N60BD1 tfi typ = 170 ns(D1)TO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC

 ..2. Size:102K  ixys
 ixsh24n60b ixsh24n60bd1 ixst24n60b ixst24n60bd1.pdf pdf_icon

IXSH24N60BD1

IXSH 24N60B VCES = 600 VHigh Speed IGBTIXST 24N60B IC25 = 48 AIXSH 24N60BD1 VCE(sat) = 2.5 VShort Circuit SOA CapabilityIXST 24N60BD1 tfi typ = 170 ns(D1)TO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC

 4.1. Size:100K  ixys
 ixsh24n60b.pdf pdf_icon

IXSH24N60BD1

IXSH 24N60B VCES = 600 VHigh Speed IGBTIXST 24N60B IC25 = 48 AIXSH 24N60BD1 VCE(sat) = 2.5 VShort Circuit SOA CapabilityIXST 24N60BD1 tfi typ = 170 ns(D1)TO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC

 5.1. Size:111K  ixys
 ixsh24n60 a.pdf pdf_icon

IXSH24N60BD1

Advance Technical InformationVCES IC90 VCE(sat)HiPerFASTTM IGBTIXSH24N60 600V 24A 2.2VShort Circuit SOA Capability600V 24A 2.7VIXSH24N60ATO-247 (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGTABCVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 VG = Gate C = CollectorIC25 TC = 25C 48 AE = Em

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Datasheet: IXRP15N120 , IXSA10N60B2D1 , IXSA15N120B , IXSA20N60B2D1 , IXSH10N60B2D1 , IXSH15N120BD1 , IXSH20N60B2D1 , IXSH24N60B , FGA25N120ANTD , IXSH30N60B2D1 , IXSH35N120B , SIG20N60P1A , IXSH45N120B , IXSK35N120BD1 , IXSK80N60B , IXSN80N60BD1 , IXSP10N60B2D1 .

History: F4-100R06KL4

Keywords - IXSH24N60BD1 transistor datasheet

 IXSH24N60BD1 cross reference
 IXSH24N60BD1 equivalent finder
 IXSH24N60BD1 lookup
 IXSH24N60BD1 substitution
 IXSH24N60BD1 replacement

 

 
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