IXSH30N60B2D1 PDF and Equivalents Search

 

IXSH30N60B2D1 Specs and Replacement

Type Designator: IXSH30N60B2D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 48 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 140 pF

Package: TO247

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IXSH30N60B2D1 datasheet

 ..1. Size:518K  ixys
ixsh30n60b2d1.pdf pdf_icon

IXSH30N60B2D1

High Speed IGBT IXSH 30N60B2D1 VCES = 600 V IXST 30N60B2D1 with Diode IC25 = 48 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V C (TAB) G C E IC25 TC = 25 C48 A IC110 TC = 110 C... See More ⇒

 ..2. Size:616K  ixys
ixsh30n60b2d1 ixst30n60b2d1.pdf pdf_icon

IXSH30N60B2D1

High Speed IGBT IXSH 30N60B2D1 VCES = 600 V IXST 30N60B2D1 with Diode IC25 = 48 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V C (TAB) G C E IC25 TC = 25 C48 A IC110 TC = 110 C... See More ⇒

 4.1. Size:129K  ixys
ixsh30n60b.pdf pdf_icon

IXSH30N60B2D1

VCES ICES tfi High Speed IGBT IXSH/IXST 30N60B 600 V 2.0 V 140 ns IXSH/IXST 30N60C 600 V 2.5 V 70 ns Short Circuit SOA Capability TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC = 25 C55 A IC90 TC = 90 C30 A G ICM ... See More ⇒

 4.2. Size:117K  ixys
ixsh30n60bd1.pdf pdf_icon

IXSH30N60B2D1

High Speed IGBT with Diode IXSH 30N60BD1 VCES = 600 V IXSK 30N60BD1 IC25 = 55 A IXST 30N60BD1 VCE(sat) = 2.0 V Short Circuit SOA Capability tfi = 140 ns Symbol Test Conditions Maximum Ratings TO-247AD (IXSH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G VGES Continuous 20 V C E VGEM Transient 30 V TO-268 (D3) IC25 TC = 25 C55 A (IXST) IC9... See More ⇒

Specs: IXSA10N60B2D1, IXSA15N120B, IXSA20N60B2D1, IXSH10N60B2D1, IXSH15N120BD1, IXSH20N60B2D1, IXSH24N60B, IXSH24N60BD1, RJP30H1DPD, IXSH35N120B, SIG20N60P1A, IXSH45N120B, IXSK35N120BD1, IXSK80N60B, IXSN80N60BD1, IXSP10N60B2D1, IXSP15N120B

Keywords - IXSH30N60B2D1 transistor spec

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