IXSK35N120BD1 PDF and Equivalents Search

 

IXSK35N120BD1 Specs and Replacement

Type Designator: IXSK35N120BD1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 70 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.6(max) V @25℃

tr ⓘ - Rise Time, typ: 27 nS

Coesⓘ - Output Capacitance, typ: 315 pF

Package: TO264

 IXSK35N120BD1 Substitution

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IXSK35N120BD1 datasheet

 ..1. Size:118K  ixys
 ixsk35n120bd1 ixsx35n120bd1.pdf pdf_icon

IXSK35N120BD1

High Voltage IXSK 35N120BD1 VCES = 1200 V IGBT with Diode IXSX 35N120BD1 IC25 = 70 A VCE(SAT) = 3.6 V Short Circuit SOA Capability Preliminary data sheet TO-264 AA (IXSK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V C E VGES Continuous 20 V PLUS TO-247TM VGEM Transient 30 V (IXSX) IC25 TC = 25 C70... See More ⇒

 ..2. Size:115K  ixys
 ixsk35n120bd1.pdf pdf_icon

IXSK35N120BD1

High Voltage IXSK 35N120BD1 VCES = 1200 V IGBT with Diode IXSX 35N120BD1 IC25 = 70 A VCE(SAT) = 3.6 V Short Circuit SOA Capability Preliminary data sheet TO-264 AA (IXSK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V C E VGES Continuous 20 V PLUS TO-247TM VGEM Transient 30 V (IXSX) IC25 TC = 25 C70... See More ⇒

 4.1. Size:39K  ixys
 ixsk35n120au1.pdf pdf_icon

IXSK35N120BD1

High Voltage IXSK35N120AU1 VCES = 1200 V IGBT with Diode IC25 = 70 A Combi Pack VCE(sat) =4 V Short Circuit SOA Capability TO-264 AA Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C70 A G = Gate, C = Collector, IC90 TC = 90 C35 A E =... See More ⇒

 9.1. Size:71K  ixys
 ixsk30n60cd1.pdf pdf_icon

IXSK35N120BD1

High Speed IGBT with Diode IXSH 30 N60CD1 VCES = 600 V IXSK 30 N60CD1 IC25 = 55 A IXST 30 N60CD1 VCE(sat) = 2.5 V Short Circuit SOA Capability tfi = 70 ns Preliminary data TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V TO-268 (D3) (IXST) VGES Continuous 20 V VGEM Transient 30 V C G... See More ⇒

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Specs: IXSH15N120BD1, IXSH20N60B2D1, IXSH24N60B, IXSH24N60BD1, IXSH30N60B2D1, IXSH35N120B, SIG20N60P1A, IXSH45N120B, GT30F126, IXSK80N60B, IXSN80N60BD1, IXSP10N60B2D1, IXSP15N120B, IXSP20N60B2, IXSP20N60B2D1, IXSP24N60B, IXSQ10N60B2D1

Keywords - IXSK35N120BD1 transistor spec

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