IXSK35N120BD1 - аналоги и описание IGBT

High Voltage IXSK 35N120BD1 VCES = 1200 V IGBT with Diode IXSX 35N120BD1 IC25 = 70 A VCE(SAT) = 3.6 V Short Circuit SOA Capability Preliminary data sheet TO-264 AA (IXSK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V C E VGES Continuous 20 V PLUS TO-247TM VGEM Transient 30 V (IXSX) IC25 TC = 25 C70

High Voltage IXSK 35N120BD1 VCES = 1200 V IGBT with Diode IXSX 35N120BD1 IC25 = 70 A VCE(SAT) = 3.6 V Short Circuit SOA Capability Preliminary data sheet TO-264 AA (IXSK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V C E VGES Continuous 20 V PLUS TO-247TM VGEM Transient 30 V (IXSX) IC25 TC = 25 C70

High Voltage IXSK35N120AU1 VCES = 1200 V IGBT with Diode IC25 = 70 A Combi Pack VCE(sat) =4 V Short Circuit SOA Capability TO-264 AA Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C70 A G = Gate, C = Collector, IC90 TC = 90 C35 A E =

High Speed IGBT with Diode IXSH 30 N60CD1 VCES = 600 V IXSK 30 N60CD1 IC25 = 55 A IXST 30 N60CD1 VCE(sat) = 2.5 V Short Circuit SOA Capability tfi = 70 ns Preliminary data TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V TO-268 (D3) (IXST) VGES Continuous 20 V VGEM Transient 30 V C G

High Speed IGBT with Diode IXSH 30N60BD1 VCES = 600 V IXSK 30N60BD1 IC25 = 55 A IXST 30N60BD1 VCE(sat) = 2.0 V Short Circuit SOA Capability tfi = 140 ns Symbol Test Conditions Maximum Ratings TO-247AD (IXSH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G VGES Continuous 20 V C E VGEM Transient 30 V TO-268 (D3) IC25 TC = 25 C55 A (IXST) IC9