IXSK80N60B Datasheet and Replacement
Type Designator: IXSK80N60B
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 500 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 160 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 45 nS
Coesⓘ - Output Capacitance, typ: 660 pF
Package: TO264
IXSK80N60B substitution
IXSK80N60B Datasheet (PDF)
ixsk80n60b.pdf
IXSK 80N60B VCES = 600 VHigh Current IGBTShort Circuit SOA Capability IXSX 80N60B IC25 = 160 AVCE(sat) = 2.5 VSymbol Test Conditions Maximum Ratings PLUS 247TM(IXSX)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGS = 1 M 600 VVCES Continuous 20 V (TAB)GVGEM Transient 30 VCEIC25 TC = 25C (silicon chip capability) 160 A TO-264 AAIC90 TC = 90C (
ixsk80n60b ixsx80n60b.pdf
IXSK 80N60B VCES = 600 VHigh Current IGBTShort Circuit SOA Capability IXSX 80N60B IC25 = 160 AVCE(sat) = 2.5 VSymbol Test Conditions Maximum Ratings PLUS 247TM(IXSX)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGS = 1 M 600 VVCES Continuous 20 V (TAB)GVGEM Transient 30 VCEIC25 TC = 25C (silicon chip capability) 160 A TO-264 AAIC90 TC = 90C (
Datasheet: IXSH20N60B2D1 , IXSH24N60B , IXSH24N60BD1 , IXSH30N60B2D1 , IXSH35N120B , SIG20N60P1A , IXSH45N120B , IXSK35N120BD1 , SGT50T65FD1PN , IXSN80N60BD1 , IXSP10N60B2D1 , IXSP15N120B , IXSP20N60B2 , IXSP20N60B2D1 , IXSP24N60B , IXSQ10N60B2D1 , SIW120N65G2P2D .
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