All IGBT. SIW120N65G2P2D Datasheet

 

SIW120N65G2P2D Datasheet and Replacement


   Type Designator: SIW120N65G2P2D
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 140 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 69 nS
   Coesⓘ - Output Capacitance, typ: 262 pF
   Package: TO247
 

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SIW120N65G2P2D Datasheet (PDF)

 ..1. Size:720K  cn super semi
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SIW120N65G2P2D

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*120N65G2P2DRev. 0.9Nov. 2023www.supersemi.com.cnSIW120N65G2P2D650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 120 Atechnology. The SJ-IGBT series provides lowVCE(sa

Datasheet: IXSK80N60B , IXSN80N60BD1 , IXSP10N60B2D1 , IXSP15N120B , IXSP20N60B2 , IXSP20N60B2D1 , IXSP24N60B , IXSQ10N60B2D1 , IHW20N120R3 , IXSR35N120BD1 , IXSR40N60BD1 , IXSR40N60CD1 , IXST15N120BD1 , IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 , IXST35N120B .

History: CM150TX-24S | IXYP10N65C3D1 | IGC50T120T8RQ | CM150TL-12NF | F3L75R12W1H3_B27 | NGTB15N120FL | NGTB15N120L

Keywords - SIW120N65G2P2D transistor datasheet

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