SIW120N65G2P2D PDF and Equivalents Search

 

SIW120N65G2P2D Specs and Replacement

Type Designator: SIW120N65G2P2D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 400 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 140 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃

tr ⓘ - Rise Time, typ: 69 nS

Coesⓘ - Output Capacitance, typ: 262 pF

Package: TO247

 SIW120N65G2P2D Substitution

- IGBT ⓘ Cross-Reference Search

 

SIW120N65G2P2D datasheet

 ..1. Size:720K  cn super semi
 siw120n65g2p2d.pdf pdf_icon

SIW120N65G2P2D

SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 650V Trench and Super Junction IGBT SI*120N65G2P2D Rev. 0.9 Nov. 2023 www.supersemi.com.cn SIW120N65G2P2D 650V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 650 V designed according to the super junction (SJ) IC 120 A technology. The SJ-IGBT series provides low VCE(sa... See More ⇒

Specs: IXSK80N60B , IXSN80N60BD1 , IXSP10N60B2D1 , IXSP15N120B , IXSP20N60B2 , IXSP20N60B2D1 , IXSP24N60B , IXSQ10N60B2D1 , MBQ50T65FDSC , IXSR35N120BD1 , IXSR40N60BD1 , IXSR40N60CD1 , IXST15N120BD1 , IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 , IXST35N120B .

History: NGTB35N65FL2WG | SRE40N065FSUR

Keywords - SIW120N65G2P2D transistor spec

 SIW120N65G2P2D cross reference
 SIW120N65G2P2D equivalent finder
 SIW120N65G2P2D lookup
 SIW120N65G2P2D substitution
 SIW120N65G2P2D replacement

 

 

 

 

↑ Back to Top
.