All IGBT. IXXA50N60B3 Datasheet

 

IXXA50N60B3 Datasheet and Replacement


   Type Designator: IXXA50N60B3
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 195 pF
   Qg ⓘ - Total Gate Charge, typ: 70 nC
   Package: TO263
 

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IXXA50N60B3 Datasheet (PDF)

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IXXA50N60B3

Preliminary Technical InformationVCES = 600V600V XPTTM IGBTs IXXA50N60B3IC110 = 50AGenX3TM IXXP50N60B3 VCE(sat) 1.80V IXXH50N60B3TO-263 AA (IXXA)Extreme Light Punch ThroughIGBT for 5-30 kHz SwitchingGEC (Tab)TO-220AB (IXXP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VVG

Datasheet: IXST24N60BD1 , IXST30N60B2D1 , IXST35N120B , SIW100N65G2P2D , IXST45N120B , IXSX35N120BD1 , IXSX40N60BD1 , IXSX80N60B , IKW50N60T , IXXH100N60B3 , IXXH100N60C3 , IXXH30N60B3D1 , IXXH30N60C3D1 , IXXH50N60B3 , IXXH50N60B3D1 , IXXH50N60C3 , IXXH50N60C3D1 .

History: TGAN20N135F3D | STGW60H65DFB | BGF15T65SD

Keywords - IXXA50N60B3 transistor datasheet

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