DG75X12T2 PDF and Equivalents Search

 

DG75X12T2 Specs and Replacement

Type Designator: DG75X12T2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 852 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃

tr ⓘ - Rise Time, typ: 117 nS

Package: TO247

 DG75X12T2 Substitution

- IGBT ⓘ Cross-Reference Search

 

DG75X12T2 datasheet

 ..1. Size:483K  cn starpower
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DG75X12T2

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 9.1. Size:533K  cn starpower
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DG75X12T2

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Specs: SIG30N60P , SIG30N60W , DG40F12T2 , DG40H12T2Y , DG50H12T2Z , DG50X07T2 , DG75H12T2 , DG75X07T2L , MBQ40T65FDSC , MSG100D350FHS , MSG100N350FH , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U , GA200SA60S .

Keywords - DG75X12T2 transistor spec

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