MSG100D350FHS Datasheet. Specs and Replacement

Type Designator: MSG100D350FHS  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 56 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 190 pF

Package: TO220F

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MSG100D350FHS datasheet

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MSG100D350FHS

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MSG100D350FHS

MSG100T120FQW Features High efficiency in hard switching And resonant topologies 10 sec short circuit withstand Time at Tvj=175 C Low Gate Charge QG Very soft,fast recovery full Current anti-parallel diode Maximum junction temperature T =175 C vjmax Applications UPS Charger Energy Storage Three-level Solar String Inverter Absolute Ratings(... See More ⇒

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MSG100D350FHS

MSG100T100FLN/QW Feature Low gate charge Trench FS Technology, saturation voltage V (sat), typ=1.85V@ Ic= CE 100A and TC=25 ROHS product Applications UPS Solar inverter Maximum Ratings Parameter Symbol Rating Unit Collector-emitter voltage V 1000 V CE Tc=25 200 A *DC collector current, limited by T I vjmax C Tc=100 100 A Pulsed collector curr... See More ⇒

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MSG100D350FHS

MSG100N350FH Features High Speed switching Low Saturation Voltage VCE(sat) = 2.2V @ IC = 100 A Built-in Fast Recovery diode RoHS Complaint Applications PDP TV Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 330 CES V Gate to Emitter Voltage V 30 GES T =25 100 C Collector Current I C T =100 50 A C Pulsed Colle... See More ⇒

Specs: SIG30N60W, DG40F12T2, DG40H12T2Y, DG50H12T2Z, DG50X07T2, DG75H12T2, DG75X07T2L, DG75X12T2, IHW20N120R2, MSG100N350FH, GA100TS120U, GA100TS60U, GA125TS120U, GA150TD120U, GA150TS60U, GA200SA60S, GA200SA60U

Keywords - MSG100D350FHS transistor spec

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