All IGBT. G7N60C3D Datasheet

 

G7N60C3D IGBT. Datasheet pdf. Equivalent

Type Designator: G7N60C3D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 60

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 14

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 8.5

Package: TO220AB

G7N60C3D Transistor Equivalent Substitute - IGBT Cross-Reference Search

G7N60C3D IGBT. Datasheet pdf. Equivalent

Type Designator: G7N60C3D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 60

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 14

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 8.5

Package: TO220AB

G7N60C3D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

G7N60C3D Datasheet (PDF)

9.1. hgtp7n60a4 hgtg7n60a4 hgt1s7n60a4.pdf Size:173K _fairchild_semi

G7N60C3D G7N60C3D

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7Aare MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5Athe best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capabilitydevices have t

9.2. au7n60s ad7n60s at7n60s af7n60s ak7n60s ag7n60s.pdf Size:1852K _anbon

G7N60C3D G7N60C3D

Datasheet: G3N60C3D , G40N60B3 , G6N40E , G6N40E1D , G6N50E , G6N50E1D , G7N60C , G7N60C3 , IKW40T120 , G8P50G , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U .

 

 
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