G7N60C3D IGBT. Datasheet pdf. Equivalent
Type Designator: G7N60C3D
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 60W
Maximum Collector-Emitter Voltage |Vce|, V: 600V
Collector-Emitter saturation Voltage |Vcesat|, V: 2V
Maximum Gate-Emitter Voltage |Veg|, V: 20V
Maximum Collector Current |Ic|, A: 14A
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 8.5
Package: TO220AB
G7N60C3D Transistor Equivalent Substitute - IGBT Cross-Reference Search
G7N60C3D PDF doc:
5.1. hgtp7n60a4_hgtg7n60a4_hgt1s7n60a4.pdf 
Size:173K _fairchild_semi
HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 • >100kHz Operation at 390V, 7A are MOS gated high voltage switching devices combining • 200kHz Operation at 390V, 5A the best features of MOSFETs and bipolar transistors. These • 600V Switching SOA Capability devices have the high i
Datasheet: G3N60C3D , G40N60B3 , G6N40E , G6N40E1D , G6N50E , G6N50E1D , G7N60C , G7N60C3 , IKW40T120 , G8P50G , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U .
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