All IGBT. IXXP50N60B3 Datasheet

 

IXXP50N60B3 Datasheet and Replacement


   Type Designator: IXXP50N60B3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 195 pF
   Package: TO220
      - IGBT Cross-Reference

 

IXXP50N60B3 Datasheet (PDF)

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IXXP50N60B3

Preliminary Technical InformationVCES = 600V600V XPTTM IGBTs IXXA50N60B3IC110 = 50AGenX3TM IXXP50N60B3 VCE(sat) 1.80V IXXH50N60B3TO-263 AA (IXXA)Extreme Light Punch ThroughIGBT for 5-30 kHz SwitchingGEC (Tab)TO-220AB (IXXP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VVG

Datasheet: IXXH75N60B3 , IXXH75N60B3D1 , IXXH75N60C3 , IXXH75N60C3D1 , IXXK100N60B3H1 , IXXK100N60C3H1 , IXXK200N60B3 , IXXK200N60C3 , IHW40T60 , IXXX100N60C3H1 , IXXX200N60B3 , IXXX200N60C3 , IXYB82N120C3H1 , IXYH50N120C3 , IXYH82N120C3 , IXYN82N120C3H1 , MDI400-12E4 .

History: DIM600DDM17-A

Keywords - IXXP50N60B3 transistor datasheet

 IXXP50N60B3 cross reference
 IXXP50N60B3 equivalent finder
 IXXP50N60B3 lookup
 IXXP50N60B3 substitution
 IXXP50N60B3 replacement

 

 
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