IXXP50N60B3 PDF and Equivalents Search

 

IXXP50N60B3 Specs and Replacement

Type Designator: IXXP50N60B3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 600 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 195 pF

Package: TO220

 IXXP50N60B3 Substitution

- IGBTⓘ Cross-Reference Search

 

IXXP50N60B3 datasheet

 ..1. Size:224K  ixys
 ixxp50n60b3.pdf pdf_icon

IXXP50N60B3

Preliminary Technical Information VCES = 600V 600V XPTTM IGBTs IXXA50N60B3 IC110 = 50A GenX3TM IXXP50N60B3 VCE(sat) 1.80V IXXH50N60B3 TO-263 AA (IXXA) Extreme Light Punch Through IGBT for 5-30 kHz Switching G E C (Tab) TO-220AB (IXXP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V VG... See More ⇒

Specs: IXXH75N60B3, IXXH75N60B3D1, IXXH75N60C3, IXXH75N60C3D1, IXXK100N60B3H1, IXXK100N60C3H1, IXXK200N60B3, IXXK200N60C3, TGAN20N135FD, IXXX100N60C3H1, IXXX200N60B3, IXXX200N60C3, IXYB82N120C3H1, IXYH50N120C3, IXYH82N120C3, IXYN82N120C3H1, MDI400-12E4

Keywords - IXXP50N60B3 transistor spec

 IXXP50N60B3 cross reference
 IXXP50N60B3 equivalent finder
 IXXP50N60B3 lookup
 IXXP50N60B3 substitution
 IXXP50N60B3 replacement

 

 

 

 

↑ Back to Top
.