IXXX200N60B3 PDF and Equivalents Search

 

IXXX200N60B3 Specs and Replacement

Type Designator: IXXX200N60B3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1630 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 380 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃

tr ⓘ - Rise Time, typ: 100 nS

Coesⓘ - Output Capacitance, typ: 570 pF

Package: PLUS247

 IXXX200N60B3 Substitution

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IXXX200N60B3 datasheet

 ..1. Size:209K  ixys
 ixxx200n60b3.pdf pdf_icon

IXXX200N60B3

Advance Technical Information VCES = 600V XPTTM 600V IXXK200N60B3 IC110 = 200A GenX3TM IXXX200N60B3 VCE(sat) 1.7V tfi(typ) = 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V G C VCGR TJ = 25 C to 175 C, RGE = 1M 600 V E Tab VGES Continuous 20 V VGE... See More ⇒

 4.1. Size:209K  ixys
 ixxx200n60c3.pdf pdf_icon

IXXX200N60B3

Advance Technical Information VCES = 600V XPTTM 600V IXXK200N60C3 IC110 = 200A GenX3TM IXXX200N60C3 VCE(sat) 2.1V tfi(typ) = 80ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V G C VCGR TJ = 25 C to 175 C, RGE = 1M 600 V E Tab VGES Continuous 20 V VGEM... See More ⇒

 5.1. Size:240K  ixys
 ixxx200n65b4.pdf pdf_icon

IXXX200N60B3

Preliminary Technical Information VCES = 650V XPTTM 650V IGBT IXXK200N65B4 IC110 = 200A GenX4TM IXXX200N65B4 VCE(sat) 1.7V tfi(typ) = 80ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXXK) G C Symbol Test Conditions Maximum Ratings E Tab VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to... See More ⇒

Specs: IXXH75N60C3, IXXH75N60C3D1, IXXK100N60B3H1, IXXK100N60C3H1, IXXK200N60B3, IXXK200N60C3, IXXP50N60B3, IXXX100N60C3H1, IRG4PC50W, IXXX200N60C3, IXYB82N120C3H1, IXYH50N120C3, IXYH82N120C3, IXYN82N120C3H1, MDI400-12E4, MIAA10WB600TMH, MIAA10WD600TMH

Keywords - IXXX200N60B3 transistor spec

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