IXYB82N120C3H1 PDF and Equivalents Search

 

IXYB82N120C3H1 Specs and Replacement

Type Designator: IXYB82N120C3H1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1040 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 164 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.75 V @25℃

tr ⓘ - Rise Time, typ: 78 nS

Coesⓘ - Output Capacitance, typ: 285 pF

Package: PLUS264

 IXYB82N120C3H1 Substitution

- IGBT ⓘ Cross-Reference Search

 

IXYB82N120C3H1 datasheet

 ..1. Size:254K  ixys
 ixyb82n120c3h1.pdf pdf_icon

IXYB82N120C3H1

1200V XPTTM IGBT VCES = 1200V IXYB82N120C3H1 GenX3TM w/ Diode IC110 = 82A VCE(sat) 3.2V tfi(typ) = 93ns High-Speed IGBT for 20-50 kHz Switching PLUS264TM Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V Tab VGES Continuous 20 V VG... See More ⇒

Specs: IXXK100N60B3H1, IXXK100N60C3H1, IXXK200N60B3, IXXK200N60C3, IXXP50N60B3, IXXX100N60C3H1, IXXX200N60B3, IXXX200N60C3, MGD623S, IXYH50N120C3, IXYH82N120C3, IXYN82N120C3H1, MDI400-12E4, MIAA10WB600TMH, MIAA10WD600TMH, MIAA10WE600TMH, MIAA10WF600TMH

Keywords - IXYB82N120C3H1 transistor spec

 IXYB82N120C3H1 cross reference
 IXYB82N120C3H1 equivalent finder
 IXYB82N120C3H1 lookup
 IXYB82N120C3H1 substitution
 IXYB82N120C3H1 replacement

 

 

 

 

↑ Back to Top
.