All IGBT. IXYB82N120C3H1 Datasheet

 

IXYB82N120C3H1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXYB82N120C3H1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1040 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 164 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 78 nS
   Coesⓘ - Output Capacitance, typ: 285 pF
   Qgⓘ - Total Gate Charge, typ: 215 nC
   Package: PLUS264

 IXYB82N120C3H1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXYB82N120C3H1 Datasheet (PDF)

 ..1. Size:254K  ixys
 ixyb82n120c3h1.pdf

IXYB82N120C3H1 IXYB82N120C3H1

1200V XPTTM IGBT VCES = 1200VIXYB82N120C3H1GenX3TM w/ Diode IC110 = 82A VCE(sat) 3.2V tfi(typ) = 93nsHigh-Speed IGBTfor 20-50 kHz SwitchingPLUS264TMSymbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VCEVCGR TJ = 25C to 150C, RGE = 1M 1200 V TabVGES Continuous 20 VVG

Datasheet: IXXK100N60B3H1 , IXXK100N60C3H1 , IXXK200N60B3 , IXXK200N60C3 , IXXP50N60B3 , IXXX100N60C3H1 , IXXX200N60B3 , IXXX200N60C3 , STGB10NB37LZ , IXYH50N120C3 , IXYH82N120C3 , IXYN82N120C3H1 , MDI400-12E4 , MIAA10WB600TMH , MIAA10WD600TMH , MIAA10WE600TMH , MIAA10WF600TMH .

 

 
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