IXYH82N120C3 IGBT. Datasheet pdf. Equivalent
Type Designator: IXYH82N120C3
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 160 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.75 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 78 nS
Coesⓘ - Output Capacitance, typ: 285 pF
Qgⓘ - Total Gate Charge, typ: 215 nC
Package: TO247
IXYH82N120C3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXYH82N120C3 Datasheet (PDF)
ixyh82n120c3.pdf
1200V XPTTM IGBT VCES = 1200VIXYH82N120C3GenX3TM IC110 = 82A VCE(sat) 3.20V tfi(typ) = 93nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VVCGR TJ = 25C to 175C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVGEM Transient
ixyh80n90c3.pdf
Advance Technical Information900V XPTTM IGBTs VCES = 900VIXYT80N90C3GenX3TM IC110 = 80AIXYH80N90C3 VCE(sat) 2.7V tfi(typ) = 86nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-268 (IXYT)GESymbol Test Conditions Maximum RatingsC (Tab)VCES TJ = 25C to 175C 900 VVCGR TJ = 25C to 175C, RGE = 1M 900 VTO-247 (IXYH)VGES Continuous 20 V
Datasheet: IXXK200N60B3 , IXXK200N60C3 , IXXP50N60B3 , IXXX100N60C3H1 , IXXX200N60B3 , IXXX200N60C3 , IXYB82N120C3H1 , IXYH50N120C3 , GT30J127 , IXYN82N120C3H1 , MDI400-12E4 , MIAA10WB600TMH , MIAA10WD600TMH , MIAA10WE600TMH , MIAA10WF600TMH , MIAA15WB600TMH , MIAA15WD600TMH .
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