IXYH82N120C3 PDF and Equivalents Search

 

IXYH82N120C3 Specs and Replacement

Type Designator: IXYH82N120C3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 160 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.75 V @25℃

tr ⓘ - Rise Time, typ: 78 nS

Coesⓘ - Output Capacitance, typ: 285 pF

Package: TO247

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IXYH82N120C3 datasheet

 ..1. Size:199K  ixys
 ixyh82n120c3.pdf pdf_icon

IXYH82N120C3

1200V XPTTM IGBT VCES = 1200V IXYH82N120C3 GenX3TM IC110 = 82A VCE(sat) 3.20V tfi(typ) = 93ns High-Speed IGBT for 20-50 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 1200 V VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V G VGES Continuous 20 V C Tab E VGEM Transient ... See More ⇒

 9.1. Size:184K  ixys
 ixyh80n90c3.pdf pdf_icon

IXYH82N120C3

Advance Technical Information 900V XPTTM IGBTs VCES = 900V IXYT80N90C3 GenX3TM IC110 = 80A IXYH80N90C3 VCE(sat) 2.7V tfi(typ) = 86ns High-Speed IGBT for 20-50 kHz Switching TO-268 (IXYT) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25 C to 175 C 900 V VCGR TJ = 25 C to 175 C, RGE = 1M 900 V TO-247 (IXYH) VGES Continuous 20 V ... See More ⇒

Specs: IXXK200N60B3, IXXK200N60C3, IXXP50N60B3, IXXX100N60C3H1, IXXX200N60B3, IXXX200N60C3, IXYB82N120C3H1, IXYH50N120C3, TGPF30N43P, IXYN82N120C3H1, MDI400-12E4, MIAA10WB600TMH, MIAA10WD600TMH, MIAA10WE600TMH, MIAA10WF600TMH, MIAA15WB600TMH, MIAA15WD600TMH

Keywords - IXYH82N120C3 transistor spec

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