All IGBT. IXYH82N120C3 Datasheet

 

IXYH82N120C3 Datasheet and Replacement


   Type Designator: IXYH82N120C3
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 160 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 78 nS
   Coesⓘ - Output Capacitance, typ: 285 pF
   Qg ⓘ - Total Gate Charge, typ: 215 nC
   Package: TO247
 

 IXYH82N120C3 substitution

   - IGBT ⓘ Cross-Reference Search

 

IXYH82N120C3 Datasheet (PDF)

 ..1. Size:199K  ixys
 ixyh82n120c3.pdf pdf_icon

IXYH82N120C3

1200V XPTTM IGBT VCES = 1200VIXYH82N120C3GenX3TM IC110 = 82A VCE(sat) 3.20V tfi(typ) = 93nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VVCGR TJ = 25C to 175C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVGEM Transient

 9.1. Size:184K  ixys
 ixyh80n90c3.pdf pdf_icon

IXYH82N120C3

Advance Technical Information900V XPTTM IGBTs VCES = 900VIXYT80N90C3GenX3TM IC110 = 80AIXYH80N90C3 VCE(sat) 2.7V tfi(typ) = 86nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-268 (IXYT)GESymbol Test Conditions Maximum RatingsC (Tab)VCES TJ = 25C to 175C 900 VVCGR TJ = 25C to 175C, RGE = 1M 900 VTO-247 (IXYH)VGES Continuous 20 V

Datasheet: IXXK200N60B3 , IXXK200N60C3 , IXXP50N60B3 , IXXX100N60C3H1 , IXXX200N60B3 , IXXX200N60C3 , IXYB82N120C3H1 , IXYH50N120C3 , IHW40T60 , IXYN82N120C3H1 , MDI400-12E4 , MIAA10WB600TMH , MIAA10WD600TMH , MIAA10WE600TMH , MIAA10WF600TMH , MIAA15WB600TMH , MIAA15WD600TMH .

Keywords - IXYH82N120C3 transistor datasheet

 IXYH82N120C3 cross reference
 IXYH82N120C3 equivalent finder
 IXYH82N120C3 lookup
 IXYH82N120C3 substitution
 IXYH82N120C3 replacement

 

 
Back to Top

 


 
.