IXYN82N120C3H1 IGBT. Datasheet pdf. Equivalent
Type Designator: IXYN82N120C3H1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 500 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 105 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.75 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 78 nS
Coesⓘ - Output Capacitance, typ: 285 pF
Qgⓘ - Total Gate Charge, typ: 215 nC
Package: SOT227B
IXYN82N120C3H1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXYN82N120C3H1 Datasheet (PDF)
ixyn82n120c3h1.pdf
1200V XPTTM IGBT VCES = 1200VIXYN82N120C3H1GenX3TM w/ Diode IC110 = 46A VCE(sat) 3.2V tfi(typ) = 93nsHigh-Speed IGBTfor 20-50 kHz SwitchingSOT-227B, miniBLOC E153432E Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continu
ixyn82n120c3.pdf
N E W P R O D U C T B R I E FEfficiency Through Technology1200V XPT IGBTsExtreme-Light Punch-Through IGBTs for High-Speed Hard-Switching ApplicationsOctober 2012OVERVIEWTO-247IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica-tion
ixyn80n90c3h1.pdf
Advance Technical Information900V XPTTM IGBT VCES = 900VIXYN80N90C3H1GenX3TM w/ Diode IC90 = 70A VCE(sat) 2.7V tfi(typ) = 86nsHigh-Speed IGBTfor 20-50 kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 900 VE VCGR TJ = 25C to 150C, RGE = 1M 900 VGVGES Continuous 20 VVGEM Tra
Datasheet: IXXK200N60C3 , IXXP50N60B3 , IXXX100N60C3H1 , IXXX200N60B3 , IXXX200N60C3 , IXYB82N120C3H1 , IXYH50N120C3 , IXYH82N120C3 , YGW40N65F1A1 , MDI400-12E4 , MIAA10WB600TMH , MIAA10WD600TMH , MIAA10WE600TMH , MIAA10WF600TMH , MIAA15WB600TMH , MIAA15WD600TMH , MIAA15WE600TMH .
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