IXYN82N120C3H1 Datasheet. Specs and Replacement

Type Designator: IXYN82N120C3H1  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 105 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.75 V @25℃

tr ⓘ - Rise Time, typ: 78 nS

Coesⓘ - Output Capacitance, typ: 285 pF

Package: SOT227B

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IXYN82N120C3H1 datasheet

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IXYN82N120C3H1

1200V XPTTM IGBT VCES = 1200V IXYN82N120C3H1 GenX3TM w/ Diode IC110 = 46A VCE(sat) 3.2V tfi(typ) = 93ns High-Speed IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 E Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continu... See More ⇒

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IXYN82N120C3H1

N E W P R O D U C T B R I E F Efficiency Through Technology 1200V XPT IGBTs Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applications October 2012 OVERVIEW TO-247 IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica- tion... See More ⇒

 9.1. Size:184K  ixys
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IXYN82N120C3H1

Advance Technical Information 900V XPTTM IGBT VCES = 900V IXYN80N90C3H1 GenX3TM w/ Diode IC90 = 70A VCE(sat) 2.7V tfi(typ) = 86ns High-Speed IGBT for 20-50 kHz Switching E SOT-227B, miniBLOC Symbol Test Conditions Maximum Ratings E153432 VCES TJ = 25 C to 150 C 900 V E VCGR TJ = 25 C to 150 C, RGE = 1M 900 V G VGES Continuous 20 V VGEM Tra... See More ⇒

Specs: IXXK200N60C3, IXXP50N60B3, IXXX100N60C3H1, IXXX200N60B3, IXXX200N60C3, IXYB82N120C3H1, IXYH50N120C3, IXYH82N120C3, NGTB75N65FL2, MDI400-12E4, MIAA10WB600TMH, MIAA10WD600TMH, MIAA10WE600TMH, MIAA10WF600TMH, MIAA15WB600TMH, MIAA15WD600TMH, MIAA15WE600TMH

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