IXYN82N120C3H1 - аналоги, параметры транзистора

IXYN82N120C3H1 даташит

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1200V XPTTM IGBT VCES = 1200V IXYN82N120C3H1 GenX3TM w/ Diode IC110 = 46A VCE(sat) 3.2V tfi(typ) = 93ns High-Speed IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 E Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continu

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N E W P R O D U C T B R I E F Efficiency Through Technology 1200V XPT IGBTs Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applications October 2012 OVERVIEW TO-247 IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica- tion

9.1. Size:184K ixys
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Advance Technical Information 900V XPTTM IGBT VCES = 900V IXYN80N90C3H1 GenX3TM w/ Diode IC90 = 70A VCE(sat) 2.7V tfi(typ) = 86ns High-Speed IGBT for 20-50 kHz Switching E SOT-227B, miniBLOC Symbol Test Conditions Maximum Ratings E153432 VCES TJ = 25 C to 150 C 900 V E VCGR TJ = 25 C to 150 C, RGE = 1M 900 V G VGES Continuous 20 V VGEM Tra

Другие IGBT... IXXK200N60C3 , IXXP50N60B3 , IXXX100N60C3H1 , IXXX200N60B3 , IXXX200N60C3 , IXYB82N120C3H1 , IXYH50N120C3 , IXYH82N120C3 , AOK40B65H2AL , MDI400-12E4 , MIAA10WB600TMH , MIAA10WD600TMH , MIAA10WE600TMH , MIAA10WF600TMH , MIAA15WB600TMH , MIAA15WD600TMH , MIAA15WE600TMH .