MDI400-12E4 Specs and Replacement
Type Designator: MDI400-12E4
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 1700 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 420 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
Package: MODULE MDI400-12E4 Substitution - IGBT ⓘ Cross-Reference Search
MDI400-12E4 datasheet
mii400-12e4 mid400-12e4 mdi400-12e4.pdf
MII400-12E4 MID400-12E4(T) MDI400-12E4 Preliminary Data IC25 = 420 A IGBT Module VCES = 1200 V phaseleg and chopper topolgies with optional temperature sensor VCE(sat) typ. = 2.2 V MII 400-12E4 MID 400-12E4(T) MDI 400-12E4 3 3 3 11 T1 T1 10 D1 D1 D11 9 3 8 2 8 8 1 1 1 1 9 9 T2 T2 D2 D12 D2 11 11 10 2 10 2 2 6 NTC for ...T version only 7 Features IGBTs T1 - T2 ... See More ⇒
Specs: IXXP50N60B3, IXXX100N60C3H1, IXXX200N60B3, IXXX200N60C3, IXYB82N120C3H1, IXYH50N120C3, IXYH82N120C3, IXYN82N120C3H1, NGTB75N65FL2, MIAA10WB600TMH, MIAA10WD600TMH, MIAA10WE600TMH, MIAA10WF600TMH, MIAA15WB600TMH, MIAA15WD600TMH, MIAA15WE600TMH, MIAA20WB600TMH
Keywords - MDI400-12E4 transistor spec
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