All IGBT. MDI400-12E4 Datasheet

 

MDI400-12E4 IGBT. Datasheet pdf. Equivalent


   Type Designator: MDI400-12E4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1700 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 420 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 60 nS
   Qgⓘ - Total Gate Charge, typ: 1740 nC
   Package: MODULE

 MDI400-12E4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MDI400-12E4 Datasheet (PDF)

 ..1. Size:202K  ixys
 mii400-12e4 mid400-12e4 mdi400-12e4.pdf

MDI400-12E4 MDI400-12E4

MII400-12E4 MID400-12E4(T) MDI400-12E4Preliminary DataIC25 = 420 AIGBT ModuleVCES = 1200 Vphaseleg and chopper topolgieswith optional temperature sensorVCE(sat) typ. = 2.2 VMII 400-12E4 MID 400-12E4(T) MDI 400-12E43 3 311T1 T1 10D1 D1 D1193 828 811 1 19 9T2 T2D2 D12 D211 1110 2 10 2 26NTC for ...T version only7FeaturesIGBTs T1 - T2

Datasheet: IXXP50N60B3 , IXXX100N60C3H1 , IXXX200N60B3 , IXXX200N60C3 , IXYB82N120C3H1 , IXYH50N120C3 , IXYH82N120C3 , IXYN82N120C3H1 , FGL60N100BNTD , MIAA10WB600TMH , MIAA10WD600TMH , MIAA10WE600TMH , MIAA10WF600TMH , MIAA15WB600TMH , MIAA15WD600TMH , MIAA15WE600TMH , MIAA20WB600TMH .

 

 
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