MII300-12E4 Datasheet and Replacement
Type Designator: MII300-12E4
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic| ⓘ - Maximum Collector Current: 280 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
Package: MODULE
MII300-12E4 substitution
MII300-12E4 Datasheet (PDF)
mii300-12a4.pdf
MII 300-12A4 MID 300-12A4 MDI 300-12A4IC25 = 330 AIGBT ModulesVCES = 1200 VShort Circuit SOA CapabilityVCE(sat) typ. = 2.2 VSquare RBSOAMII 300-12A4 MID 300-12A4MDI 300-12A411 103 3 39T1T1 8D1D1 D113288119 1 19T2 T2D2D12 D211 11E7287310 2 102 2FeaturesIGBTs T1 - T2 NPT IGBT technologySymbol Conditions Maximum Ratings
Datasheet: MIEB100W1200TEH , MIEB101H1200EH , MIEB101W1200EH , MII100-12A3 , MII145-12A3 , MII150-12A4 , MII200-12A4 , MII300-12A4 , HGTG30N60A4 , MII400-12E4 , MII75-12A3 , MIO1200-25E10 , MIO1200-33E10 , MIO1200-33E11 , MIO1500-25E10 , MIO1800-17E10 , MIO2400-17E10 .
History: IRG4BC20K-S | IXSR35N120BD1 | MIXG180W1200TEH | IXST30N60B2D1
Keywords - MII300-12E4 transistor datasheet
MII300-12E4 cross reference
MII300-12E4 equivalent finder
MII300-12E4 lookup
MII300-12E4 substitution
MII300-12E4 replacement
History: IRG4BC20K-S | IXSR35N120BD1 | MIXG180W1200TEH | IXST30N60B2D1
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